Fairchild FQAF16N25C service manual

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FQAF16N25C

250V N-Channel MOSFET

FQAF16N25C

®

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 11.4A, 250V, R

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 68 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.27Ω @VGS = 10 V

DS(on)

suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.

D

{

{

●

●

◀

◀

▲

▲

●

●

●

●

{

{

S

G

SD

Absolute Maximum Ratings T

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

{

{

G

Symbol Parameter FQAF16N25C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 250 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

11. 4 A

7.2 A

45.6 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

410 mJ

11. 4 A

7.3 mJ

5.5 V/ns

73 W

- Derate above 25°C 0.59 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2004 Fairchild Semiconductor Corporation Rev. A, March 2004

Thermal Resistance, Junction-to-Case -- 1.7 °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

FQAF16N25C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 250 V, VGS = 0 V

DS

V

= 200 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

= -30 V, VDS = 0 V

V

GS

250 -- -- V

-- 0.31 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

= VGS, ID = 250 µA

V

DS

V

= 10 V, ID = 5.7 A

GS

= 40 V, ID = 5.7 A (Note 4)

V

DS

2.0 -- 4.0 V

-- 0.22 0.27 Ω

-- 9.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 170 220 pF

Reverse Transfer Capacitance -- 68 89 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 830 1080 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 130 270 ns

Turn-Off Delay Time -- 135 280 ns

Turn-Off Fall Time -- 105 220 ns

Total Gate Charge

Gate-Source Charge -- 5.6 -- nC

Gate-Drain Charge -- 22.7 -- nC

= 125 V, ID = 15.6 A,

V

DD

R

= 25 Ω

G

(Not e 4, 5)

V

= 200 V, ID = 15.6 A,

DS

= 10 V

V

GS

(Not e 4, 5)

-- 15 40 ns

-- 41 53.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.7mH, I

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2004 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 11.4 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 45.6 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 2.47 -- µC

= 15.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

AS

≤ 11.4A, di/dt ≤ 300A/µs, VDD ≤ BV

Starting TJ = 25°C

DSS,

= 0 V, IS = 11.4 A

V

GS

V

= 0 V, IS = 15.6 A,

GS

/ dt = 100 A/µs (Not e 4)

dI

F

-- -- 1.5 V

-- 260 -- ns

Rev. A, March 2004

Typical Characteristics

FQAF16N25C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

VDS, Drain-Source Voltage [V]

1.5

1.0

[Ω ],

DS(ON)

R

0.5

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

Note : T※J = 25℃

0.0
0 1020304050

ID, Drai n Current [A]

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150℃

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Tes t

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

Notes :※

500

1. VGS = 0 V

2. f = 1 MHz

0

-1

10

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain- Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

VDS = 50V

VDS = 125V

VDS = 200V

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Note : I※D = 15.6A

Rev. A, March 2004©2004 Fairchild Semiconductor Corporation