Fairchild FQAF11N90C service manual

FQAF11N90C

900V N-Channel MOSFET

FQAF11N90C

®

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 7.0A, 900V, R

• Low gate charge ( typical 60 nC)

• Low Crss ( typical 23 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.1Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies..

D

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G

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TO-3PF

G

S

D

Absolute Maximum Ratings T

FQAF Series

= 25°C unless otherwise noted

C

Symbol Parameter FQAF11N90C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 900 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

(Note 2)
(Note 1)
(Note 1)
(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C 0.96 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

!!!!

!!!!

S

7.0 A

4.4 A

28.0 A

960 mJ

7.0 A
12 mJ

4.0 V/ns

120 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2003 Fairchild Semiconductor Corporation Rev. A, November 2003

Thermal Resistance, Junction-to-Case -- 1.04 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

FQAF11N90C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.5 A

V

GS

= 50 V, ID = 3.5 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.91 1.1 Ω

-- -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 215 280 pF
Reverse Transfer Capacitance -- 23 30 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2530 3290 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 130 270 ns
Turn-Off Delay Time -- 130 270 ns
Turn-Off Fall Time -- 85 1 8 0 n s
Total Gate Charge
Gate-Source Charge -- 13 -- nC
Gate-Drain Charge -- 25 -- nC

= 450 V, ID = 11.0 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 720 V, ID = 11.0 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 60 130 ns

-- 60 8 0 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28.0 A

= 0 V, IS = 7.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 17.0 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 11.0 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 1000 -- ns

Rev. A, November 2003©2003 Fairchild Semiconductor Corporation

Typical Characteristics

FQAF11N90C

V

GS

Top : 15.0 V

10.0 V

1

10

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

$

1. 250's Pulse Te st

2. T

10

VDS, Drain-Source Voltage [V]

2.5

2.0

],

&

[

1.5

DS(ON)

R

1.0

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0.5
0 5 10 15 20 25 30

ID, Drain Current [A]

Notes :

1

$

= 25

C

Note : T

1

10

150oC

%

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

$

Notes :

= 50V

1. V

DS

2. 250's Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

%

= 25

J

0

10

%

25

%

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

$

Notes :

1. V

= 0V

GS

2. 250's Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

1

10

Capacitance [pF]

4500

4000

3500

3000

2500

2000

1500

1000

500

0

-1

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

gd

$

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

VDS = 180V

VDS = 450V

VDS = 720V

QG, Tota l Gate Charge [nC]

$

Note : I

D

= 11A

Figure 6. Gat e C harge Characteristics

Rev. A, November 2003©2003 Fairchild Semiconductor Corporation