Fairchild FQAF11N90 service manual

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FQAF11N90

FQAF11N90

900V N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQAF11N90 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 900 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.96 W/°C

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 7.2A, 900V, R

• Low gate charge ( typical 72 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.96 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

7.2 A

4.55 A

28.8 A

1000 mJ

7.2 A
12 mJ

4.0 V/ns

120 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.04 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, September 2000

FQAF11N90

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.6 A

V

GS

= 50 V, ID = 3.6 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.75 0.96 Ω

-- 9.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 260 340 pF
Reverse Transfer Capacitance -- 30 40 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2700 3500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 135 280 ns
Turn-Off Delay Time -- 165 340 ns
Turn-Off Fall Time -- 90 1 9 0 ns
Total Gate Charge
Gate-Source Charge -- 16 -- nC
Gate-Drain Charge -- 35 -- nC

= 450 V, ID = 11.4 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 11.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 65 140 ns

-- 72 94 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 36.5mH, IAS = 7.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11.4A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 7.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28.8 A

= 0 V, IS = 7.2 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 11.2 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 11.4 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 850 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

V

GS

Top : 15.0 V

10.0 V

, Drain Current [A]

D

I

10

1

10

0

10

-1

10

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

-1

0

10

VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

25oC

246810

VGS, Gate-Source V oltage [V]

FQAF11N90

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2.0

1.6

],

Ω

[

1.2

DS(ON)

R

0.8

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0.4
0 8 16 24 32 40

ID, Dra i n Current [A ]

※

Note : T

1

10

℃

= 25

J

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Sou r c e -Drain voltag e [ V ]

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistan ce Vari ation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

5000
4500
4000
3500
3000

2500
2000
1500

Capacitance [pF]

1000

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

C

iss

C

oss

= C

rss

gd

※

10

1. V

2. f = 1 MHz

1

Note s :

= 0 V

GS

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050607080

VDS, Drain-Source Voltage [V]

VDS = 180V

VDS = 450V

VDS = 720V

QG, Tota l Gate Charg e [nC]

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 11.4 A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International