Fairchild FQA9P25 service manual

FQA9P25

QFET

TM

●

●

●

▲

▶







●

●

●

▲

▶







FQA9P25

250V P-Channel MOSFET

May 2000

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• -10.5A, -250V, R

• Low gate charge ( typical 29 nC)

• Low Crss ( typical 27 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.62 @VGS = -10 V

DS(on)

suited for high efficiency switching DC/DC converters.

S

G

G

S

D

Absolute Maximum Ratings T

TO-3P

FQA Series

= 25°C unless otherwise noted

C

D

Symbol Parameter FQA9P25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -250 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-10.5 A

-6.6 A

-42 A

Gate-Source Voltage  30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

650 mJ

-10.5 A

15 mJ

-5.5 V/ns

150 W

- Derate above 25°C 1.2 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

JC

R

CS

R

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.83 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, May 2000

FQA9P25

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

BV

DSS

/ T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 A

V

GS

I

= -250 A, Referenced to 25°C

D

V

= -250 V, VGS = 0 V

DS

V

= -200 V, TC = 125°C

DS

= -30 V, VDS = 0 V

V

GS

= 30 V, VDS = 0 V

V

GS

-250 -- -- V

-- -0.2 -- V/°C

-- -- -1 A

-- -- -10 A

-- -- -100 nA

-- -- 100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

= VGS, ID = -250 A

V

DS

V

= -10 V, ID = -5.25 A

GS

= -40 V, ID = -5.25 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 0.48 0.62 

-- 6.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 170 220 pF

Reverse Transfer Capacitance -- 27 35 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 910 1180 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 150 310 ns

Turn-Off Delay Time -- 45 100 ns

Turn-Off Fall Time -- 65 140 ns

Total Gate Charge

Gate-Source Charge -- 7.6 -- nC

Gate-Drain Charge -- 14 -- nC

= -125 V, ID = -9.4 A,

V

DD

= 25 

R

G

V

= -200 V, ID = -9.4 A,

DS

= -10 V

V

GS

(Note 4, 5)

(Note 4, 5)

-- 20 50 ns

-- 29 38 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 9.4mH, I

3. I

SD

4. Pulse Test : Pulse width ≤ 300s, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -10.5 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- -42 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 1.45 -- C

= -10.5A, VDD = -50V, RG = 25 Starting TJ = 25°C

AS

≤ -9.4A, di/dt ≤ 300A/s, VDD ≤ BV

Starting TJ = 25°C

DSS,

= 0 V, IS = -10.5 A

V

GS

V

= 0 V, IS = -9.4 A,

GS

/ dt = 100 A/s

dI

F

-- -- -5.0 V

-- 190 -- ns

(Note 4)

Rev. A, May 2000

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10

-1

10

0

10

1

150℃

Notes :※

1. VGS = 0V

2. 250μs Pulse Test

25℃

-I

DR

, Reverse Drain Current [A]

-VSD , Source- Drain Volt age [V]

246810

10

-1

10

0

10

1

150℃

25℃

-55℃

Notes :※

1. VDS = -50V

2. 250μ s Pulse Test

-I

D

, Drain Current [A]

-VGS , Gate- Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V
Bottom : -5.5 V

Notes :※

1. 250μ s Pulse Test

2. T

C

= 25℃

-I

D

, Drain Current [A]

-VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 30 35

0

2

4

6

8

10

12

VDS = -125V

VDS = -50V

VDS = -200V

Note : I※D = -9.4 A

-V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

400

800

1200

1600

2000

2400

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

0 10203040

0.0

0.5

1.0

1.5

2.0

Note : T※J = 25℃

VGS = - 20V

VGS = - 10V

R

DS(on)

[],

Drain-Source On-Resistance

-ID , Drain Current [A]

Typical Characteristics

FQA9P25

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate V oltage

©2000 Fairchild Semiconductor International

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Rev. A, May 2000