Fairchild FQA9N90-F109 service manual

FQA9N90_F109

900V N-Channel MOSFET

FQA9N90_F109 900V N-Channel MOSFET

November 2007

®

QFET

Features

• 8.6A, 900V, R

• Low gate charge ( typical 55 nC)

• Low Crss ( typical 25pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

= 1.3Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FQA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQA9N90_F109 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage 900 V

Drain Current - Continuous (TC = 25°C) 8.6 A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 240 W

- Derate above 25°C 1.92 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 5.45 A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

34.4 A

900 mJ

8.6 A

24 mJ

4.0 V/ns

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA9N90_F109 Rev. A

Thermal Resistance, Junction-to-Case -- 0.52 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA9N90 FQA9N90_F109 TO-3PN -- -- 30

FQA9N90_F109 900V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 23mH, IAS =8.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8.6A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 -- V/°C

Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA

= 720 V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 4.3 A -- 1.0 1.3 Ω

Forward Transconductance VDS = 50 V, ID = 4.3 A (Note 4) -- 9.2 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 200 260 pF

f = 1.0 MHz

-- 2100 2700 pF

Reverse Transfer Capacitance -- 25 33 pF

Turn-O n Delay Time VDD = 450 V, ID = 8.6A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 720 V, ID = 8.6A,

V

= 10 V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

--

--

45 100

100 210

135 280

80 170

55 72

12

26

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 8.6 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 34.4 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.6 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 8.6 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 7.6 --

Starting TJ = 25°C

DSS,

F

-- 720 -- ns

ns

ns

ns

ns

nC

µC

FQA9N90_F109 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

GS

1

10

150oC

FQA9N90_F109 900V N-Channel MOSFET

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

VDS, Drai n-Source Volt age [V]

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

Notes :※

1. VDS = 50V

2. 250µ s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

2.4

2.1

VGS = 10V

1.8

[Ω ],

DS(ON)

R

1.5

1.2

Drain-Source On-Resistance

0.9
0 5 10 15 20 25 30

VGS = 20V

ID, Dr ain Cur rent [ A]

Note : T※J = 25℃

1

10

0

10

, Reverse Drain Current [A]

DR

I

10

150℃

-1

0.2 0.4 0. 6 0.8 1. 0 1.2 1.4

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

2000

Capacitance [pF]

1000

0

-1

10

FQA9N90_F109 Rev. A

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Source Volt age [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 1020 30405060

3 www.fairchildsemi.com

VDS = 180V

VDS = 450V

VDS = 720V

QG, Total Gate Charge [nC]

Note : I※D = 8.6 A