Fairchild FQA8N100C service manual

September 2005

QFET

FQA8N100C 1000V N-Channel MOSFET

®

FQA8N100C

1000V N-Channel MOSFET

Features

• 8A, 1000V, R

• Low gate charge (typical 53 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

(typical 16 pF)

rss

Absolute Maximum Ratings

DS(on)

= 1.45Ω @V

GSD

GS

= 10 V

TO-3PN

FQA Series

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies.

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Symbol Parameter FQA8N100C Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 1000 V

Drain Current - Continuous (T

- Continuous (T

Drain Current - Pulsed
Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 25°C)

C

- Derate above 25°C

= 25°C)

C

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

8
5

32 A

850 mJ

8A

22.5 mJ

4.0 V/ns

225

1.79

300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.56 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

A
A

W

W/°C

©2005 Fairchild Semiconductor Corporation

FQA8N100C Rev. A

1

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA8N100C FQA8N100C TO-3PN -- -- 30

FQA8N100C 1000V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0V, I

Breakdown Voltage Temperature

DSS

J

Coefficient

= 250µA, Referenced to 25°C--1.4--V/°C

I

D

Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V

V

DS

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, I

Static Drain-Source
On-Resistance

V

GS

Forward Transconductance VDS = 50V, ID = 4A

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 195 255 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 16 24 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time VDD = 500V, ID = 8A

= 25Ω

R

Turn-On Rise Time -- 95 200 ns

G

Turn-Off Delay Time -- 122 254 ns

Turn-Off Fall Time -- 80 170 ns

Total Gate Charge VDS = 800V, ID = 8A

V

Gate-Source Charge -- 13 -- nC

GS

Gate-Drain Charge -- 23 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, R

3. I

≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 8A

/dt =100A/µs

dI

Reverse Recovery Charge -- 5.2 -- µC

= 25Ω, Starting TJ = 25°C

G

, Starting T

DSS

= 25°C

J

F

= 250µA 1000 -- -- V

D

= 800V, T

= 10V, I

--

= 125°C

C

= 250µA3.0--5.0V

D

= 4A -- 1.2 1.45 Ω

D

(Note 4)

--

-- 8.0 -- S

--

--

-- 2475 3220 pF

-- 50 110 ns

(Note 4, 5)

-- 53 70 nC

= 10V

(Note 4, 5)

-- 620 -- ns

(Note 4)

10

100

µA
µA

FQA8N100C Rev. A

2

www.fairchildsemi.com

Typical Performance Character istics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQA8N100C 1000V N-Channel MOSFET

-55oC

Notes :

※

1. VDS = 50V

2. 250µ s Pulse Test

10

10

, Drain Current [A]

D

I

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

6.0 V
Bottom : 5.5 V

0

-1

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150oC

Notes :

※

1. 250µ s Pulse Test

2. T

= 25

℃

C

1

10

10

, Drain Current [A]

D

I

10

25oC

0

-1

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

3.0

2.5

VGS = 10V

2.0

[Ω ],

DS(ON)

1.5

R

1.0

Drain-Source On-Resistance

※

0.5
0 5 10 15 20 25

ID, Drain Current [A]

VGS = 20V

Note : T

1

10

0

10

150

, Reverse Drain Current [A]

DR

= 25

℃

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

VSD, Source-Drain voltage [V]

25

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

FQA8N100C Rev. A

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

Notes :

※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 10203040506070

VDS = 800V

3

VDS = 200V

VDS = 500V

QG, Total Gate Charge [nC]

Note : I

※

= 8A

D

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