FQA7N80C_F109
800V N-Channel MOSFET
FQA7N80C_F109 800V N-Channel MOSFET
September 2007
®
QFET
Features
• 7.0A, 800V, R
• Low gate charge ( typical 27nC)
• Low Crss ( typical 10pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
= 1.9Ω @VGS = 10 V
DS(on)
GSD
TO-3PN
FQA Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FQA7N80C_F109 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 800 V
Drain Current - Continuous (TC = 25°C) 7.0 A
- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 198 W
- Derate above 25°C 1.75 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 4.4 A
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
28.0 A
580 mJ
7.0 A
30 mJ
4.0 V/ns
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQA7N80C_F109 Rev. A
Thermal Resistance, Junction-to-Case -- 0.63 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA7N80C FQA7N80C_F109 TO-3PN -- -- 30
FQA7N80C_F109 800V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22.2mH, IAS =7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤8.4A, di/dt ≤200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.93 -- V/°C
Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
= 640 V, TC = 125°C -- -- 100 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 1.57 1.9 Ω
Forward Transconductance VDS = 50 V, ID = 3.5 A (Note 4) -- 5.6 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 120 155 pF
f = 1.0 MHz
-- 1290 1680 pF
Reverse Transfer Capacitance -- 10 13 pF
Turn-O n Delay Time VDD = 400 V, ID = 6.6A,
R
= 25 Ω
Turn-O n Rise Time --
Turn-Off Delay Time --
Turn-Off Fall Time --
G
(Note 4, 5)
Total Gate Charge VDS = 640 V, ID = 6.6A,
V
= 10 V
Gate-Source Charge --
Gate-Drain Charge --
GS
(Note 4, 5)
--
--
35 80
100 210
50 110
60 130
27 35
8.2
11
-- nC
-- nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28.0 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS =7.0 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 6.6 A,
dI
/ dt = 100 A/µs (Note 4)
Reverse Recovery Charge -- 7.0 --
Starting TJ = 25°C
DSS,
F
-- 650 -- ns
ns
ns
ns
ns
nC
µC
FQA7N80C_F109 Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQA7N80C_F109 800V N-Channel MOSFET
-55oC
Notes :※
1. VDS = 50V
2. 250µ s Pul se Test
10
10
, Drain Current [A]
10
D
I
10
V
Top : 15.0 V
10.0 V
1
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
-1
-2
-1
10
GS
0
10
VDS, Drai n-Source Vol tage [V]
1
10
150oC
25oC
Notes :※
1. 250µ s Pul se Test
2. T
= 25℃
C
1
10
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25℃
Note s :※
1. VGS = 0V
2. 250µ s Pulse Test
4.0
3.5
3.0
[Ω ],
2.5
DS(ON)
R
2.0
Drain-Source On-Resistance
1.5
1.0
0 3 6 9 12 15 18
VGS = 20V
VGS = 10V
ID, Drai n Curr ent [A]
Note : T※J = 25℃
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.20.40.60.81.01.21.4
150℃
VSD, Source-Drain volt age [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2000
1500
1000
Capacitance [pF]
500
0
-1
10
FQA7N80C_F109 Rev. A
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drai n-Source Voltage [V]
= Cgs + Cgd (Cds = short ed)
iss
= Cds + C
oss
gd
= C
rss
gd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
VDS = 160V
VDS = 400V
VDS = 640V
Note : I※D = 6.6A