Fairchild FQA65N20 service manual
FQA65N20
200V N-Channel MOSFET
FQA65N20
August 2001
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 65A, 200V, R
• Low gate charge ( typical 170 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.032Ω @VGS = 10 V
DS(on)
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
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S
G
SD
Absolute Maximum Ratings T
TO-3PN
FQA Series
= 25°C unless otherwise noted
C
!
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G
Symbol Parameter FQA65N20 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
65 A
41 A
260 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1010 mJ
65 A
31 mJ
5.5 V/ns
310 W
- Derate above 25°C 2.5 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Rev. A1, August 2001
FQA65N20
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 200 V, VGS = 0 V
DS
V
= 160 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
200 -- -- V
-- 0.15 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V , ID = 32.5 A
V
GS
= 40 V, ID = 32.5 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.025 0.032 Ω
-- 58 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 1000 1200 pF
Reverse Transfer Capacitance -- 90 120 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 6600 7900 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 640 770 ns
Turn-Off Delay Time -- 340 690 n s
Turn-Off Fall Time -- 275 56 0 n s
Total Gate Charge
Gate-Source Charge -- 45 -- nC
Gate-Drain Charge -- 75 -- nC
= 100 V, ID = 65 A,
V
DD
= 25 Ω
R
G
V
= 160 V, ID = 65 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 120 250 ns
-- 170 200 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.36mH, IAS = 65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 65A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 65 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 260 A
= 0 V, IS = 65 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.4 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 65 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 195 -- ns
(Note 4)
Rev. A1, August 2001
Typical Characteristics
FQA65N20
V
GS
Top : 15 V
10 V
2
8.0 V
10
7.0 V
6.5 V
6.0 V
Bottom : 5 .5 V
1
10
, Dra in Current [A]
D
I
-1
10
0
10
※
Note s :
1. 250μs Pulse Test
2. TC = 25
10
VDS , Drain-Source Voltage [V]
0.15
0.12
0.09
[Ω],
DS(on)
R
0.06
Drain-Source On-Resistance
0.03
0.00
0 50 100 150 200 250 300 350
VGS = 10V
VGS = 20V
※
ID , Drain Current [A]
1
Note : T
2
10
1
10
0
, Dra in Current [A]
10
D
I
℃
-1
10
246810
℃
150
℃
25
-55
℃
※
Notes :
1. V
= 40V
DS
2. 250μs Pulse Test
VGS , Gate -Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
2
10
1
10
= 25
J
℃
℃
150
0
10
, Reverse Drain Current [A]
DR
℃
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
25
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Test
VSD , Source-Dr a i n Voltage [V ]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
14000
12000
10000
8000
6000
4000
Capacitance [pF]
2000
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
1. V
GS
1
10
2. f = 1 MHz
C
rss
0
10
= 0 V
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 20406080100120140160180
QG, Tota l Gate Charge [n C]
VDS = 40V
VDS = 100V
VDS = 160V
※
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
Note : I
= 65 A
D
Rev. A1, August 2001©2001 Fairchild Semiconductor Corporation
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