Fairchild FQA62N25C service manual

FQA62N25C
250V N-Channel MOSFET
FQA62N25C
®
QFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
Features
• 62A, 250V, R
• Low gate charge ( typical 100 nC)
• Low Crss ( typical 63.5 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.035 @VGS = 10 V
DS(on)
suited for high efficiency switching DC/DC converters and switch mode power supplies.
D
{
{
{
{
S
TO-3PN
GSD
FQA Series
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
{
{
G
Symbol Parameter FQA62N25C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt P
D
Drain-Source Voltage 250 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
62 A
39 A
248 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
2300 mJ
62 A
29.8 mJ
5.5 V/ns
298 W
- Derate above 25°C 2.38 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
Thermal Resistance, Junction-to-Case -- 0.42 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
FQA62N25C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
= 250 V, VGS = 0 V
V
DS
= 200 V, TC = 125°C
V
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
250 -- -- V
-- 0.28 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
= VGS, ID = 250 µA
V
DS
= 10 V, ID = 31 A
V
GS
V
= 40 V, ID = 31 A (Note 4)
DS
2.0 -- 4.0 V
-- 0.029 0.035
-- 55 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 945 1230 pF
Reverse Transfer Capacitance -- 63.5 83 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 4830 6280 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 395 800 ns
Turn-Off Delay Time -- 245 500 ns
Turn-Off Fall Time -- 335 680 ns
Total Gate Charge
Gate-Source Charge -- 25.5 -- nC
Gate-Drain Charge -- 39 -- nC
V
= 125 V, ID = 62 A,
DD
= 25
R
G
(Note 4)
V
= 200 V, ID = 62 A,
DS
V
= 10 V
GS
(Note 4)
-- 75 160 ns
-- 100 130 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.96mH, I
3. I
SD
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 248 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.77 -- µC
= 62A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
AS
62A, di/dt 300A/µs, VDD BV
Starting TJ = 25°C
DSS,
= 0 V, IS = 62 A
V
GS
= 0 V, IS = 62 A,
V
GS
dI
/ dt = 100 A/µs (Not e 4)
F
-- -- 1.5 V
-- 340 -- ns
Rev. A, March 2004
Typical Characteristics
FQA62N25C
V
GS
Top : 15.0 V
10.0 V
2
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V Bottom : 4.5 V
1
10
, Drain Current [A]
D
I
0
10
-1
10
0
10
VDS, Drain-Source Voltage [ V]
0.15
0.12
0.09
[],
DS(ON)
0.06
R
0.03
Drain-Source On-Resistance
0.00 0 50 100 150 200 250 300
VGS = 10V
ID, Drain Current [ A]
Notes :
1. 250µ s Pulse Test
2. T
= 25
C
1
10
VGS = 20V
Note : TJ = 25
2
10
150oC
25oC
1
10
, Drain Current [A]
D
I
0
10
246810
-55oC
Notes :
1. VDS = 40V
2. 250µ s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
2
10
1
10
150
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1. 8
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 50V
VDS = 125V
VDS = 200V
Capacitance [pF]
10000
8000
6000
4000
2000
0
10
Notes :
1. VGS = 0 V
2. f = 1 MHz
-1
C C C
C
iss
C
oss
C
rss
0
10
VDS, Drain- Source Voltage [ V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
020406080100120
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Note : ID = 62A
Rev. A, March 2004©2004 Fairchild Semiconductor Corporation
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