Fairchild FQA46N15, FQA46N15-F109 service manual

FQA46N15 / FQA46N15_F109

150V N-Channel MOSFET

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

August 2007

®

QFET

Features

• 50A, 150V, R

• Low gate charge ( typical 85 nC)

• Low Crss ( typical 100pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.042Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FQA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQA46N15 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

, T

J

STG

T

L

Drain-Source Voltage 150 V

Drain Current - Continuous (TC = 25°C) 50 A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 250 W

- Derate above 25°C 1.67 W/°C

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 35.3 A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

200 A

650 mJ

50 A

25 mJ

6.0 V/ns

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA46N15 / FQA46N15_F109 Rev. A1

Thermal Resistance, Junction-to-Case -- 0.6 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA46N15 FQA46N15 TO-3PN -- -- 30

FQA46N15

FQA46N15_F109 TO-3PN -- -- 30

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 45.6A, di/dt ≤300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 150 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C

Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 µA

V

= 120 V, TC = 150°C -- -- 10 µA

DS

Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 25A -- 0.033 0.042 Ω

Forward Transconductance VDS = 40 V, ID = 25A (Note 4) -- 36 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 520 670 pF

Reverse Transfer Capacitance -- 100 130 pF

f = 1.0 MHz

Turn-O n Delay Time VDD = 75 V, ID = 45.6A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

G

(Note 4, 5)

Turn-Off Fall Time --

Total Gate Charge VDS = 120 V, ID = 45.6A,

= 10 V

V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

-- 2500 3250 pF

--

35 80

320 650

210 430

200 410

--

85 110

15

41

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V

Reverse Recovery Time VGS = 0 V, IS = 45.6 A,

/ dt = 100 A/µs (Note 4)

dI

Reverse Recovery Charge -- 0.55 --

Starting TJ = 25°C

DSS,

F

-- 130 -- ns

ns

ns

ns

ns

nC

µC

FQA46N15 / FQA46N15_F109 Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

-55℃

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

V

, Drain Current [A]

D

I

2

10

1

10

10

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

-1

GS

0

10

VDS, Drain-Source Voltage [V]

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

2

10

1

10

175℃

25℃

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS , Gate-Source Voltage [ V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

0.20

2

10

0.15

VGS = 10V

[Ω],

0.10

DS(on)

R

0.05

Drain-Source On-Resistance

0.00
0 40 80 120 160 200 240

VGS = 20V

ID , Drain Current [A]

Note : T※J = 25℃

1

10

175℃

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

12

10

8

6

VDS = 30V

VDS = 75V

VDS = 120V

2000

Capacitance [pF]

1000

0

-1

10

C

0

10

VDS, Drain- Source Volt age [V]

FQA46N15 / FQA46N15_F109 Rev. A1

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060708090

Note : I※D = 45.6 A

10

1

Notes :※

1. VGS = 0 V

2. f = 1 MHz

rss

QG, Total Gate Charge [nC]

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