Fairchild FQA36P15 service manual

FQA36P15 / FQA36P15_F109

150V P-Channel MOSFET

FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET

September 2010

®

QFET

Features

• -36A, -150V, R

• Low gate charge ( typical 81 nC)

• Low Crss ( typical 110pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.09Ω @VGS = -10 V

DS(on)

GSD

TO-3P

FQA Series

Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

S

G

D

Absolute Maximum Ratings

Symbol Parameter FQA36P15 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage -150 V

Drain Current - Continuous (TC = 25°C) -36 A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 294 W

- Derate above 25°C 1.96 W/°C

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) -25.5 A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

-144 A

1400 mJ

-36 A

29.4 mJ

-5.0 V/ns

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA36P15 / FQA36P15_F109 Rev. B2

Thermal Resistance, Junction-to-Case -- 0.51 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA36P15 FQA36P15 TO-3PN -- -- 30

FQA36P15 FQA36P15_F109 TO-3PN -- -- 30

FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.45mH, IAS =-36A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -36A, di/dt ≤300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -150 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.13 -- V/°C

Zero Gate Voltage Drain Current VDS = -150 V, VGS = 0 V -- -- -10 µA

= -120 V, TC = 150°C -- -- -100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA

Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0---4.0V

Static Drain-Source On-Resistance VGS = -10 V, ID = -18A -- 0.076 0.09 Ω

Forward Transconductance VDS = -40 V, ID = -18A (Note 4) -- 19.5 -- S

Input Capacitance VDS = -25 V, VGS = 0 V,

Output Capacitance -- 710 920 pF

Reverse Transfer Capacitance -- 110 140 pF

f = 1.0 MHz

Turn-O n Delay Time VDD = -75 V, ID = -36A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

G

(Note 4, 5)

Turn-Off Fall Time --

Total Gate Charge VDS = -120 V, ID = -36A,

V

= -10 V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

-- 2550 3320 pF

--

50 110

350 710

155 320

150 310

--

81 105

19

42

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- -36 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- -144 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS =-36A -- -- -4.0 V

Reverse Recovery Time VGS = 0 V, IS = -36 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 1.45 --

Starting TJ = 25°C

DSS,

F

-- 198 -- ns

ns

ns

ns

ns

nC

µC

FQA36P15 / FQA36P15_F109 Rev. B2

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

, Drain Current [A]

D

-I

2

10

1

10

0

10

-1

10

10

V

GS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V
Bottom : -4.5 V

-1

0

10

-VDS, Drain-Source Voltage [V]

Notes :※

1. 250µ s Pulse Test

2. T

= 25℃

C

1

10

2

10

1

10

0

10

, Drain Current [A]

D

-I

-1

10

246810

175oC

25oC

-VGS, Gate-Source Volt age [V]

-55oC

Notes :※

1. VDS = -40V

2. 250µ s Pulse Test

FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.4

0.3

VGS = -10V

[Ω ],

0.2

DS(ON)

R

0.1

Drain-Source On-Resistance

0.0
0 20 40 60 80 100 120 140 160

-ID, Drain Current [A]

VGS = -20V

Note : T※J = 25℃

2

10

1

10

175℃

0

10

, Reverse Drain Current [A]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

25℃

-VSD, Source-Drain voltage [V]

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

7000

C

6000

5000

4000

3000

Capacitance [pF]

2000

1000

0

10

oss

C

iss

C

rss

-1

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Note ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

-VDS, Drain-Source Voltage [V]

14

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 10203040 506070 8090

QG, Total Gate Charge [nC]

VDS = -30V

VDS = -75V

VDS = -120V

Note : I※D = -36A

FQA36P15 / FQA36P15_F109 Rev. B2

3 www.fairchildsemi.com