Fairchild FQA28N15 service manual

FQA28N15

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150V N-Channel MOSFET

FQA28N15 150V N-Channel MOSFET

April 2011

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifire,

Features

• 33A, 150V, R

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 50 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.09Ω @VGS = 10 V

DS(on)

high efficiency switching for DC/DC converters, and DC
motor control, uninterrupted power supply.

D

G

TO-3PN

GSD

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQA28N15 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 150 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C 1.52 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

S

33 A

23.3 A

132 A

300 mJ

33 A

22.7 mJ

5.5 V/ns

227 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2011 Fairchild Semiconductor Corporation
FQA28N15 Rev. A1

Thermal Resistance, Junction-to-Case -- 0.66 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA28N15 FQA28N15 TO-3PN - - 30

FQA28N15 150V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 μA

V

GS

I

= 250 μA, Referenced to 25°C

D

V

= 150 V, VGS = 0 V

DS

V

= 120 V, TC = 150°C

DS

= 25 V, VDS = 0 V

V

GS

= -25 V, VDS = 0 V

V

GS

150 -- -- V

-- 0.17 -- V/°C

-- -- 1 μA

-- -- 10 μA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= VGS, ID = 250 μA

V

DS

= 10 V, ID = 16.5 A

V

GS

= 40 V, ID = 16.5 A

V

DS

2.0 -- 4.0 V

-- 0.067 0.09 Ω

-- 20 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 260 340 pF

Reverse Transfer Capacitance -- 50 65 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

(Note 4)

-- 1250 1600 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 180 370 ns

= 75 V, ID = 28 A,

V

DD

= 25 Ω

R

G

-- 17 45 ns

Turn-Off Delay Time -- 100 210 ns

Turn-Off Fall Time -- 115 240 ns

Total Gate Charge

Gate-Source Charge -- 7.9 -- nC

Gate-Drain Charge -- 20 -- nC

V

= 120 V, ID = 28 A,

DS

= 10 V

V

GS

(Note 4,5)

(Note 4,5)

-- 40 52 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.46mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 28A, di/dt ≤ 300A/us, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

FQA28N15 Rev. A1

Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A

= 0 V, IS = 33 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 0.4 -- μC

Starting TJ = 25°C

DSS,

V

GS

V

= 0 V, IS = 28 A,

GS

/ dt = 100 A/μs (Note 4)

dI

F

2

-- -- 1.5 V

-- 100 -- ns

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0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10

-1

10

0

10

1

10

2

175∩

Notes :∝

1. VGS = 0V

2. 250

レs Pulse Test

25∩

I

DR

, Reverse Drain Current [A]

VSD, Source- Drain vol tage [V]

246810

10

-1

10

0

10

1

10

2

175∩

25∩

-55∩

Notes :∝

1. VDS = 40V

2. 250

レs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

Notes :∝

1. 250レs Pulse Test

2. T

C

= 25∩

I

D

, Drain Current [A]

VDS, Drai n-Source Vol tage [V]

0 9 18 27 36 45

0

2

4

6

8

10

12

VDS = 75V

VDS = 30V

VDS = 120V

Note : I∝D = 28 A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

Notes :∝

1. VGS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drai n-Source Volt age [V]

0 20406080100

0

60

120

180

240

300

Note : T∝J = 25∩

VGS = 20V

VGS = 10V

R

DS(ON)

[mヘ

],

Drain-Source On-Resistance

ID , Drain Curr ent [A]

Typical Characteristics

FQA28N15 150V N-Channel MOSFET

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

FQA28N15 Rev. A1

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

3

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