Fairchild FQA24N60 service manual

FQA24N60

FQA24N60

600V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

G

SD

Absolute Maximum Ratings

Symbol Parameter FQA24N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 600 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 2.5 W/°C

TO-3PN

FQA Series





= 25°C unless otherwise noted

T

C

= 25°C)

C

= 100°C)

C

Features

• 23.5A, 600V, R

• Low gate charge ( typical 110 nC)

• Low Crss ( typical 56 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

!

!

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.24 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

23.5 A

14.9 A
94 A

±

30 V

1300 mJ

23.5 A
31 mJ

4.5

310 W

300 °C

Vns

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

CS

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.4 °CW
Thermal Resistance, Case-to-Sink 0.24 -- °CW
Thermal Resistance, Junction-to-Ambient -- 40 °CW

Rev. A, April 2000

FQA24N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.6 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 11.8 A

V

GS

= 50 V, ID = 11.8 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.18 0.24

-- 22.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 550 720 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 56 75 pF

-- 4200 5500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 270 550 ns

= 300 V, ID = 23.5 A,

V

DD

Ω

= 25

R

G

Turn-Off Delay Time -- 200 410 ns
Turn-Off Fall Time -- 170 35 0 n s

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 25 -- nC
Gate-Drain Charge -- 53 -- nC

V

= 480 V, ID = 23.5 A,

DS

V

= 10 V

GS

(Note 4, 5)

(Note 4, 5)

-- 90 190 ns

-- 110 145 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 4.3mH, I

3. ISD  23.5A, di/dt  200A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 23.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 94 A

= 0 V, IS = 23.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 6.2 --

= 23.5A, VDD = 50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 23.5 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 470 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

FQA24N60

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

1

10

, Dra in Curre n t [A ]

D

I

0

10

-1

10

0

10



Note s :

1. 250s Pulse Test

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

1.0

0.8

],

0.6



[

DS(ON)

0.4

R

0.2

Drain-Source On-Resistance

0.0
0 102030405060708090100

VGS = 20V

VGS = 10V



Note : T

ID, Dra i n Current [A]

1

10

0

10

, Drain Current [A]

D

I



-1

10

246810



150



25



-55



Notes :

= 50V

1. V

DS

2. 250s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR



= 25

J

I

-1

10



150

0.2 0.4 0.6 0.8 1.0 1.2 1 .4



25



Note s :

1. V

= 0V

GS

2. 250s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

8000

6000

4000

Capacitance [pF]

2000

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

020406080100120

QG, Tota l Gate Charge [n C]

VDS = 120V

VDS = 300V

VDS = 480V



Note : I

= 23.5 A

D

Rev. A, April 2000