Fairchild FQA170N06 service manual

FQA170N06

60V N-Channel MOSFET

FQA170N06

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/

Features

• 170A, 60V, R

• Low gate charge ( typical 220 nC)

• Low Crss ( typical 620 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.0056Ω @VGS = 10 V

DS(on)

DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

G

S

D

Absolute Maximum Ratings T

TO-3PN

FQA Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQA170N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

170 A
120 A

680 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

990 mJ

170 A

37.5 mJ

7.0 V/ns

375 W

- Derate above 25°C 2.5 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

FQA170N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.053 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 85 A

V

GS

= 30 V, ID = 85 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.0045 0.0056 Ω

-- 85 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 3100 4000 pF
Reverse Transfer Capacitance -- 620 810 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 7200 9350 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 700 1400 ns
Turn-Off Delay Time -- 260 530 ns
Turn-Off Fall Time -- 430 870 n s
Total Gate Charge
Gate-Source Charge -- 50 -- nC
Gate-Drain Charge -- 100 -- nC

= 30 V, ID = 85 A,

V

DD

= 25 Ω

R

G

V

= 48 V, ID = 170 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 85 180 ns

-- 220 290 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 40µH, IAS = 170A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 170A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package

Maximum Continuous Drain-Source Diode Forward Current -- -- 170 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 680 A

= 0 V, IS = 170 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 315 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 170 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 100 -- ns

(Note 4)

Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation

Typical Characteristics

FQA170N06

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

2

10

Bottom : 4.5 V

, Drain Current [A]

D

I

1

10

-1

10

0

10

"

Notes :

1. 250#s Pulse Te st

2. T

= 25

C

VDS, Drain-Source Vo ltage [V]

7

6

],

$

5

[m

DS(ON)

R

4

Drain-Source On-Resistance

3

0 200 400 600 800

VGS = 10V

VGS = 20V

"

Note : T

ID, Dra in Current [A]

2

10

!

175

1

!

1

10

10

!

25

, Drain Current [A]

0

D

10

I

-1

10

246810

!

-55

"

Note s :

1. V

= 30V

DS

2. 250#s Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics.Figure 1. On-Region Char acteristics.

2

10

1

!

= 25

J

10

0

10

, Reverse Drain Current [A]

DR

I

!

175

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

!

25

"

Notes :

1. V

= 0V

GS

2. 250#s Pulse Tes t

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Ga te Voltage.

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

24000

20000

16000

12000

8000

Capacitance [pF]

4000

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

oss

C

iss

C

rss

0

10

"

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 40 80 120 160 200 240

QG, Tota l Gate Charge [n C]

VDS = 30V

VDS = 48V

"

Note : I

= 170A

D

Figure 5. Capacitance Characteristics. Figure 6. Gate -Charge Characteristics.

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001