Fairchild FQA160N08 service manual
FQA160N08
FQA160N08
80V N-Channel MOSFET
September 2000
QFET
QFET
QFETQFET
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
G
SD
Absolute Maximum Ratings T
Symbol Parameter FQA160N08 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 80 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Continuous (T
- Continuous (T
- Derate above 25°C 2.5 W/°C
TO-3PN
FQA Series
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
Features
• 160A, 80V, R
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 530 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.007Ω @VGS = 10 V
DS(on)
D
!
!
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"
"
"
!
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"
"
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S
160 A
113 A
640 A
1600 mJ
160 A
37.5 mJ
6.5 V/ns
375 W
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Rev. A, September 2000
FQA160N08
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 80 V, VGS = 0 V
DS
V
= 64 V, TC = 150°C
DS
= 25 V, VDS = 0 V
V
GS
= -25 V, VDS = 0 V
V
GS
80 -- -- V
-- 0.08 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, ID = 250 µA
V
DS
V
= 10 V, ID = 80 A
GS
= 30 V, ID = 80 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.0056 0.007 Ω
-- 92 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 2400 3100 pF
Reverse Transfer Capacitance -- 530 690 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 6100 7900 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 970 2000 ns
Turn-Off Delay Time -- 260 530 ns
Turn-Off Fall Time -- 410 830 ns
Total Gate Charge
Gate-Source Charge -- 43 -- nC
Gate-Drain Charge -- 120 -- nC
= 40 V, ID = 160 A,
V
DD
R
= 25 Ω
G
V
= 64 V, ID = 160 A,
DS
= 10 V
V
GS
(Note 4, 5)
(Note 4, 5)
-- 85 180 ns
-- 225 290 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.086mH, IAS = 160A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 160A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temp er at ur e
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 160 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 640 A
= 0 V, IS = 160 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 510 -- nC
Starting TJ = 25°C
DSS,
V
GS
V
= 0 V, IS = 160 A,
GS
/ dt = 100 A/µs
dI
F
(Note 6)
-- -- 1.5 V
-- 125 -- ns
(Note 4)
Rev. A, September 2000
Typical Characteristics
V
Top : 1 5 .0 V
10
, Drain Current [A]
D
I
10
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
2
5.0 V
Bottom : 4 .5 V
1
-1
10
FQA160N08
20
15
],
Ω
[m
10
DS(ON)
R
5
Drain-Source On-Resistance
0
0 200 400 600 800 1000
GS
0
10
VDS, Drain-Source Voltage [V]
VGS = 10V
VGS = 20V
ID , Drain Current [A]
2
10
℃
175
1
10
℃
25
0
, Dra in Current [A]
D
10
I
-1
10
246810
※
Notes :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
℃
-55
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
2
10
1
10
0
10
, Reverse Drain Curre n t [A]
175
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
℃
25
※
Note : T
℃
= 25
J
VSD, Source-Drain voltage [V]
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Test
Figure 3. On-Resistance Variation vs.
Drain Current and Gate V oltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20000
18000
16000
14000
12000
10000
8000
6000
Capacitance [pF]
4000
2000
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
※
Notes :
1. V
= 0 V
C
iss
C
oss
C
rss
0
10
10
1
GS
2. f = 1 MHz
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 40 80 120 160 200 240
QG, Tota l Gate Char g e [ n C]
VDS = 40V
VDS = 64V
※
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Note : I
= 160A
D
Rev. A, September 2000©2000 Fairchild Semiconductor International
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