Fairchild FQA140N10 service manual

FQA140N10

FQA140N10

100V N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQA140N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 2.5 W/°C

TO-3PN

FQA Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 140A, 100V, R

• Low gate charge ( typical 220 nC)

• Low Crss ( typical 470 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

!

!

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.01Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

140 A

99 A

560 A

1500 mJ

140 A

37.5 mJ

6.5 V/ns

375 W

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, September 2000

FQA140N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 80 V, VGS = 0 V

DS

V

= 64 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.08 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 70 A

V

GS

= 30 V, ID = 70 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.008 0.01 Ω

-- 80 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 2000 2600 pF
Reverse Transfer Capacitance -- 420 550 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 6100 7900 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 940 1890 ns
Turn-Off Delay Time -- 350 71 0 ns
Turn-Off Fall Time -- 360 7 3 0 ns
Total Gate Charge
Gate-Source Charge -- 39 -- nC
Gate-Drain Charge -- 114 -- nC

= 40 V, ID = 140 A,

V

DD

= 25 Ω

R

G

V

= 64 V, ID = 140 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 75 160 ns

-- 220 285 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 140A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 140 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A

= 0 V, IS = 140 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 730 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 140 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 6)

-- -- 1.5 V

-- 140 -- ns

(Note 4)

Rev. A, September 2000

Typical Characteristics

V

GS

Top : 15.0 V

10

, Drain Current [A]

D

I

10

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

2

5.0 V
Bottom : 4.5 V

1

-1

10

0

10

VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

2

10

℃

175

1

10

℃

25

, Dra in Curre n t [A]

0

D

10

I

-1

10

246810

VGS , Gate-Source Voltage [V]

FQA140N10

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

30

25

],

20

Ω

[m

15

DS(ON)

R

10

Drain-Source On-Resistance

5

0

0 100 200 300 400 500 600 700 800 900

VGS = 10V

VGS = 20V

※

ID , Drai n Curren t [A]

Note : T

2

10

1

℃

= 25

J

10

0

10

, Reverse Drain Current [A]

℃

175

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

25

VSD , Source-Drain Voltage [V]

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

20000

18000

16000

14000

12000

10000

8000

6000

Capacitance [pF]

4000

2000

0

10

C

oss

C

iss

C

rss

-1

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

0

10

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-S o u rce V o ltag e [V ]

2

GS

V

0

0 40 80 120 160 200 240

QG, Tota l Gate C harge [n C]

VDS = 50V

VDS = 80V

※

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

Note : I

= 140 A

D

Rev. A, September 2000©2000 Fairchild Semiconductor International