Fairchild FQA13N50CF service manual

FQA13N50CF

500V N-Channel MOSFET

FQA13N50CF 500V N-Channel MOSFET

July 2007

®

FRFET

Features

• 15A, 500V, R

• Low gate charge (typical 43nC)

• Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 100ns)

• RoHS compliant

(typical 20pF)

rss

= 0.48Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

TO-3PN

GSD

FQA Series

S

Absolute Maximum Ratings

Symbol Parameter FQA13N50CF Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C) 15 A

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 218 W

- Derate above 25°C 1.56 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8''"from case for 5 seconds

= 100°C) 9.5 A

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

60 A

860 mJ

15 A

21.8 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA13N50CF Rev. A1

Thermal Resistance, Junction-to-Case -- 0.58 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQA13N50CF FQA13N50CF TO-3PN -- -- 30
FQA13N50C

F FQA13N50CF_F109 TO-3PN -- -- 30

FQA13N50CF 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics
V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics
C

iss

C

oss

C

rss

Switching Characteristics
t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings
I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.6mH, IAS =15A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 15A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er ature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA

V

= 400 V, TC = 125°C -- -- 10 µA

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5A -- 0.43 0.48 Ω
Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) -- 15 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 180 235 pF
Reverse Transfer Capacitance -- 20 25 pF

f = 1.0 MHz

Turn-On Delay Time VDD = 250 V, ID = 15A,

R

= 25 Ω

Turn-On Rise Time -­Turn-Off Delay Time --

G

(Note 4, 5)

Turn-Off Fall Time -­Total Gate Charge VDS = 400 V, ID = 15A,

= 10 V

V

Gate-Source Charge -­Gate-Drain Charge --

GS

(Note 4, 5)

-- 1580 2055 pF

--

25 60
100 210
130 270
100 210

--

43 56

7.5

18.5

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 15 A,

/ dt = 100 A/µs (Note 4)

dI

Reverse Recovery Charge -- 0.4 --

Starting TJ = 25°C

DSS,

F

-- 100 -- ns

ns
ns
ns
ns

nC

µC

FQA13N50CF Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQA13N50CF 500V N-Channel MOSFET

-55°C

Notes :

= 40V

1. V

DS

2. 250

µs Pulse Test

, Drain Current [A]
I

10

10

D

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

-1

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

Notes :

1. 250us Pulse Test

2. T

= 25°C

C

1

10

1

10

150°C

25°C

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

25°C

Notes :

1. V

= 0V

GS

2. 250

µs Pulse Tes t

1.5

VGS = 10V

[Ω],

1.0

DS(ON)

R

VGS = 20V

0.5

Drain-Source On-Resistance

0 5 10 15 20 25 30 35

Note : TJ = 25°C

ID, Drain Current [A]

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150°C

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characte ristics

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

FQA13N50CF Rev. A1

C

= Cgs + Cgd (Cds = shorted)

iss

C

oss

C

= C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drain -Source Voltag e [V]

= Cds + C

gd

10

gd

Notes ;

1. V

2. f = 1 MHz

1

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [n C]

3 www.fairchildsemi.com

VDS = 100V

VDS = 250V

VDS = 400V

Note : ID = 15A