Fairchild FQA10N80C_F109 service manual

FQA10N80C_F109
800V N-Channel MOSFET
FQA10N80C_F109 800V N-Channel MOSFET
August 2007
®
QFET
• 10A, 800V, R
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 15pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
= 1.1 @VGS = 10 V
DS(on)
GSD
TO-3PN
FQA Series
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FQA10N80C_F109 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 800 V
Drain Current - Continuous (TC = 25°C) 10 A
- Continuous (T
Drain Current - Pulsed Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 240 W
- Derate above 25°C 1.92 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 6.32 A
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
40 A
920 mJ
10 A
24 mJ
4.0 V/ns
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQA10N80C_F109 Rev. A
Thermal Resistance, Junction-to-Case -- 0.52 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA10N80C FQA10N80C_F109 TO-3PN -- -- 30
FQA10N80C_F109 800V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BVT
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17.3mH, IAS =10.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 10.0A, di/dt 200A/µs, VDD BV
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.98 -- V/°C
Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
= 640 V, TC = 125°C -- -- 100 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A -- 0.93 1.1
Forward Transconductance VDS = 50 V, ID = 5.0 A (Note 4) -- 5.8 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 180 230 pF
f = 1.0 MHz
-- 2150 2800 pF
Reverse Transfer Capacitance -- 15 20 pF
Turn-O n Delay Time VDD = 400 V, ID = 10.0A,
R
= 25
Turn-O n Rise Time --
Turn-Off Delay Time --
Turn-Off Fall Time --
G
(Note 4, 5)
Total Gate Charge VDS = 640 V, ID = 10.0A,
V
= 10 V
Gate-Source Charge --
Gate-Drain Charge --
GS
(Note 4, 5)
--
--
50 110
130 270
90 190
80 170
45 58
13.5
17
-- nC
-- nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 40.0 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS =10.0 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 10.0 A,
dI
/ dt = 100 A/µs (Note 4)
Reverse Recovery Charge -- 10.9 --
Starting TJ = 25°C
DSS,
F
-- 730 -- ns
ns
ns
ns
ns
nC
µC
FQA10N80C_F109 Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQA10N80C_F109 800V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
V Top : 15.0 V
10.0 V
8.0 V
1
7.0 V
6.5 V
6.0 V Bottom : 5.5 V
0
-1
-1
10
GS
0
10
VDS, Drai n-Source Vol tage [V]
1
10
150oC
25oC
Notes :
1. 250µ s Pul se Test
2. T
= 25
C
1
10
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Vol tage [V]
-55oC
1. VDS = 50V
2. 250µ s Pulse Test
Notes :
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2.5
2.0
VGS = 10V
[],
1.5
DS(ON)
R
1.0
Drain-Source On-Resistance
0.5 0 5 10 15 20 25 30
VGS = 20V
ID, Drai n Curr ent [A]
Note : TJ = 25
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0. 4 0.6 0. 8 1.0 1.2 1.4
150
VSD, Source-Drain vol tage [V]
25
Notes :
1. VGS = 0V
2. 250µ s Pul se Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
3500
3000
2500
2000
1500
Capacitance [pF]
1000
500
0
-1
10
FQA10N80C_F109 Rev. A
C
iss
C
oss
C
rss
0
10
VDS, Drai n-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted )
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
Notes :
1. VGS = 0 V
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 1020304050
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
VDS = 160V
VDS = 400V
VDS = 640V
Note : ID = 10A
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