Fairchild FODM8801A, FODM8801B, FODM8801C service manual

FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

August 2011

FODM8801A, FODM8801B, FODM8801C OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

Features

Utilizing patented process technology to achieve high

■

operating temperature up to 125°C

■

Guaranteed Current Transfer Ratio (CTR) speciﬁcations across full temperature range

– Excellent CTR linearity at high temperature – CTR at very low input current, I High isolation voltage regulated by safety agency,

■

UL1577, 3750 VAC DIN EN/IEC60747-5-2 (pending approval)

Compact half pitch, mini-ﬂat, 4-pin package

■

(1.27mm lead pitch, 2.4mm maximum standoff height)

■

> 5mm creepage and clearance distance Applicable to Infrared Ray reﬂow, 245°C

■

for 1 min. and

RMS

F

Applications

■

Primarily suited for DC-DC converters

■

For ground loop isolation, signal to noise isolation Communications – adapters, chargers

■

Consumer – appliances, set top boxes Industrial – power supplies, motor control,

■

programmable logic control

Description

The OptoHiT™ Series, FODM8801, is a ﬁrst of its kind phototransistor, utilizing Fairchild’s leading edge patented process technology to achieving high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode optically coupled to a phototransistor, in a compact half pitch, mini-ﬂat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, Viso, is rated at 3750 VAC

RMS

.

Schematic Package Drawing

1

CATHODE

2

4

COLLECTORANODE

3

EMITTER

° C

Safety and Insulation Ratings for Half-Pitch Mini-Flat Package

Symbol Parameter Min. Typ. Max. Unit

FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1

For rated main voltage < 150Vrms I-IV

For rated main voltage < 300Vrms I-III

Climatic Classiﬁcation 40/125/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

IORM

IOTM

Input to Output Test Voltage, Method b, VIORM x 1.875 = V

= 1 sec, Partial Discharge < 5pC

t

m

,100% Production Test with

PR

Input to Output Test Voltage, Method a, VIORM x 1.5 = V

t

= 60 sec, Partial Discharge < 5pC

m

,Type and Sample Test with

PR

Max Working Insulation Voltage 565 V

Highest Allowable Over Voltage 4000 V

1060 V

848 V

External Creepage 5 mm

External Clearance 5 mm

Insulation thickness 0.5 mm

Safety Limit Values- Maximum Values allowed in the event of a failure,

T

S

I

S,INPUT

P

S,OUTPUT

R

IO

Case Temperature

Input Current

Output Power

Insulation Resistance at T

,V

=500V

S

IO

150

200

300

10

9

Ω

peak

mA

mW

≤

Ω

FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

Absolute Maximum Ratings

(T

= 25°C unless otherwise speciﬁed)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL PACKAGE

T

STG

T

OPR

T

J

T

SOL

EMITTER

I

F(average)

V

R

PD

LED

DETECTOR

I

C(average)

V

CEO

V

ECO

PD

C

Storage Temperature -40 to +150 °C

Operating Temperature -40 to +125 °C

Junction Temperature -40 to +140 °C

Lead Solder Temperature

260 for 10 sec. °C

(Refer to Reﬂow Temperature Proﬁle on page 11)

Continuous Forward Current 20 mA

Reverse Input Voltage 6 V

Power Dissipation

(1)(3)

40 mW

Continuous Collector Current 30 mA

Collector-Emitter Voltage 75 V

Emitter-Collector Voltage 7 V

Collector Power Dissipation

(2)(3)

150 mW

Recommended Operating Conditions

The Recommended Operating Conditions table deﬁnes the conditions for actual device operation. Recommended operating conditions are speciﬁed to ensure optimal performance to the datasheet speciﬁcations. Fairchild does not recommend exceeding them or designing to absolute maximum ratings.

Symbol Parameter Value Units

T

A

V

FL(OFF)

I

FH

Isolation Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

R

C

Notes:

1. Derate linearly from 73˚C at a rate of 0.24mW/˚C

2. Derate linearly from 73˚C at a rate of 2.23mW/˚C.

3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings.

4. Device is considered a two terminal device: Pins 1 and 2 are shorted together and Pins 3 and 4 are shorted together.

5. 3,750 VAC

Input-Output Isolation Voltage

ISO

Isolation Resistance

ISO

Isolation Capacitance Freq. = 1MHz 0.3 0.5 pF

ISO

RMS

Operating Temperature -40 to +125 °C

Input Low Voltage -5 to 0.8 V

Input High Forward Current 1 to 10 mA

f = 60Hz, t = 1min., I

V

= 500V

I-O

for 1 minute duration is equivalent to 4,500 VAC

(4)

10µA

I-O

for 1 second duration.

RMS

(4)(5)

3,750 Vac

12

10

RMS

∆

FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

Electrical Characteristics

Apply over all recommended conditions (T All typical values are measured at T

= 25°C.

A

= -40°C to +125°C unless otherwise speciﬁed).

A

Symbol Parameter Conditions Min. Typ. Max. Units

EMITTER

V

Forward Voltage I

F

V

/ ∆ T

F

I

R

C

T

Forward Voltage Coefﬁcient I

A

Reverse Current V

Te r minal Capacitance V = 0V, f = 1MHz 30 pF

DETECTOR

BV

CEO

Collector-Emitter Breakdown Voltage

BV

ECO

Emitter-Collector Breakdown Voltage

I

Collector Dark Current V

CEO

C

Capacitance V

CE

= 1mA 1.0 1.35 1.8 V

F

= 1mA -1.6

F

= 6V 10 µA

R

I

= 0.5mA, I

C

I

= 100µA, I

E

= 75V, I

CE

= 25 ° C

T

A

= 50V, I

V

CE

V

= 5V, I

CE

= 0V, f = 1MHz 8 pF

CE

= 0mA 75 130 V

F

= 0mA 7 12 V

F

= 0mA,

F

= 0mA 50 µA

F

= 0mA 30 µA

F

100 nA

mV / ° C

FODM8801X — OptoHiT™ Series, High Temperature Phototransistor Optocoupler in Half Pitch Mini-Flat 4-Pin Package

Transfer Characteristics

Apply over all recommended conditions (T All typical values are measured at T

= 25°C.

A

= -40°C to +125°C unless otherwise speciﬁed).

A

Symbol Parameter Device Conditions Min. Typ. Max. Units

CTR

V

Current Transfer

CE

Ratio (collector-emitter)

CE(SAT)

Saturated Current Tr ansfer Ratio (collector-emitter)

Saturation Voltage FODM8801A IF = 1.0mA, IC = 0.3mA 0.17 0.4 V

CE(SAT)

FODM8801A I

FODM8801B I

FODM8801C I

= 1.0mA, V

F

@ T

= 25°C

A

I

= 1.0mA, V

F

I

= 1.6mA, V

F

I

= 3.0mA, VCE = 5V 45 138 %

F

= 1.0mA, VCE = 5V

F

= 25°C

@ T

A

I

= 1.0mA, VCE = 5V 65 195 360 %

F

I

= 1.6mA, VCE = 5V 70 202 %

F

I

= 3.0mA, VCE = 5V 75 215 %

F

= 1.0mA, VCE = 5V

F

@ T

= 25°C

A

= 1.0mA, VCE = 5V 100 300 560 %

I

F

I

= 1.6mA, VCE = 5V 110 312 %

F

I

= 3.0mA, VCE = 5V 115 330 %

F

= 5V

CE

= 5V 35 120 230 %

CE

= 5V 40 125 %

CE

FODM8801A IF = 1.0mA, VCE = 0.4V

= 25°C

@ T

A

I

= 1.0mA, VCE = 0.4V 30 108 %

F

I

= 1.6mA, VCE = 0.4V 25 104 %

F

I

= 3.0mA, VCE = 0.4V 20 92 %

F

FODM8801B I

FODM8801C I

FODM8801B I

FODM8801C I

= 1.0mA, VCE = 0.4V

F

= 25°C

@ T

A

I

= 1.0mA, VCE = 0.4V 45 168 %

F

I

= 1.6mA, VCE = 0.4V 40 155 %

F

= 3.0mA, VCE = 0.4V 35 132 %

I

F

= 1.0mA, VCE = 0.4V

F

= 25°C

@ T

A

I

= 1.0mA, VCE = 0.4V 75 238 %

F

I

= 1.6mA, VCE = 0.4V 65 215 %

F

I

= 3.0mA, VCE = 0.4V 55 177 %

F

I

= 1.6mA, IC = 0.4mA 0.16 0.4 V

F

I

= 3.0mA, IC = 0.6mA 0.15 0.4 V

F

= 1.0mA, IC = 0.45mA 0.17 0.4 V

F

I

= 1.6mA, IC = 0.6mA 0.16 0.4 V

F

I

= 3.0mA, IC = 1.0mA 0.16 0.4 V

F

= 1.0mA, IC = 0.75mA 0.18 0.4 V

F

I

= 1.6mA, IC = 1.0mA 0.17 0.4 V

F

I

= 3.0mA, IC = 1.6mA 0.17 0.4 V

F

80 120 160 %

130 195 260 %

200 300 400 %

65 108 150 %

90 168 245 %

140 238 380 %