Fairchild FODM121 service manual

FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
February 2012
Features
More than 5mm creepage/clearance
Compact 4-pin surface mount package (2.4mm maximum standoff height)
Current Transfer Ratio in selected groups
DC Input: FODM121: 50–600% FODM2701: 50–300% FODM121A: 100–300% FODM124: 100% MIN FODM121B: 50–150% FODM121C: 100–200%
AC Input: FODM2705: 50–300%
Available in tape and reel quantities of 2500
Applicable to Infrared Ray reflow (260°C max, 10 sec.)
C-UL, UL and VDE* certifications
*option ‘V’ required
Package Dimensions
Applications
Digital logic inputs Microprocessor inputs
Power supply monitor Twisted pair line receiver
Telephone line receiver
Description
The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation.
4.40±0.20
1
2.54
3.85
±0.20
2.00±0.20
0.10±0.10
0.40±0.10
Note:
All dimensions are in millimeters.
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODMXXX Rev. 1.1.4
5.30±0.30
+0.2
7.00
–0.7
0.20±0.05
CATHODE
FODM121, FODM124, FODM2701
CATHODE
2
Equivalent Circuit
1
2
Equivalent Circuit
FODM2705
4
COLLECTORANODE
EMITTER
3
4
COLLECTORANODE
EMITTER
3
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL PACKAGE
T
STG
T
OPR
EMITTER
I
F (avg)
I
F (pk)
V
R
P
D
DETECTOR
P
D
V
CEO
V
ECO
Storage Temperature -40 to +125 °C
Operating Temperature -40 to +110 °C
Continuous Forward Current 50 mA
Peak Forward Current (1µs pulse, 300 pps.) 1 A
Reverse Input Voltage 6 V
Power Dissipation 70 mW
Derate linearly (above 25°C) 0.65 mW/°C
Continuous Collector Current 80 mA
Power Dissipation 150 mW
Derate linearly (above 25°C) 2.0 mW/°C
Collector-Emitter Voltage FODM2701, FODM2705 40 V
FODM121 Series, FODM124 80
Emitter-Collector Voltage 7 V
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
(T
Electrical Characteristics
= 25°C)
A
Individual Component Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
I
DETECTOR
BV
CEO
BV
ECO
I
CEO
C
CE
Forward Voltage I
F
Reverse Current V
R
Breakdown Voltage Collector to Emitter
Emitter to Collector I
Collector Dark Current
Capacitance V
= 10mA FODM121 Series,
F
1.0 1.3 V
FODM124
I
= 5mA FODM2701 1.4
F
I
= ±5mA FODM2705
F
= 5V FODM2701 5 µA
R
FODM121 Series
FODM124
I
= 1mA, I
C
= 0 FODM121 Series,
F
80 V
FODM124
FODM2701,
40
FODM2705
= 100µA, I
E
V
= 40V, I
CE
= 0V, f = 1MHz All 10 pF
CE
= 0 All 7 V
F
= 0 All 100 nA
F
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODMXXX Rev. 1.1.4 2
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C)
Transfer Characteristics
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
CTR DC Current Transfer Ratio I
CTR Symmetry I
V
CE (SAT)
Saturation Voltage I
Rise Time (Non-Saturated) I
t
r
t
Fall Time (Non-Saturated) I
f
= ±5mA, V
F
= 5mA, V
I
F
I
= 5mA, V
F
= 1mA, V
I
F
= 0.5mA, V
I
F
= ±5mA, V
F
= ±10mA, I
F
= 10mA, I
I
F
I
= 8mA, I
F
I
= 1mA, I
F
= 2mA, V
C
R
= 100
L
= 2mA, V
C
R
= 100
L
= 5V FODM2705 50 300 %
CE
= 5V FODM2701 50 300
CE
= 5V FODM121 50 600
CE
FODM121A 100 300
FODM121B 50 150
FODM121C 100 200
= 0.5V FODM124 100 1200
CE
= 1.5V 50
CE
= 5V FODM2705 0.3 3.0
CE
= 2mA FODM2705 0.3 V
C
= 2mA FODM2701 0.3
C
= 2.4mA FODM121
C
0.4
Series
= 0.5mA FODM124 0.4
C
CE
CE
= 5V,
= 5V,
All 3 µs
All 3 µs
Isolation Characteristics
Characteristic Test Conditions Symbol Device Min. Typ.* Max. Unit
Steady State Isolation Voltage
*All typicals at T
= 25°C
A
Note:
1. Steady state isolation voltage, V common, and pins 3 and 4 are common.
(1)
1 Minute V
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
ISO
ISO
All 3750 VRMS
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODMXXX Rev. 1.1.4 3
Typical Performance Curves
Fig. 1 Forward Current vs. Forward Voltage
100
T
= 110oC
A
o
C
70
o
25
C
10
- Forward Current (mA)
F
I
1
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF - Forward Voltage (V)
0
-40oC
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Fig. 2 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
0.35
0.30
0.25
= 8mA
o
C
0.20
0.15
0.10
- Collector-Emitter Saturation Voltage(V)
0.05
CE(sat)
V
0.00
-40 -20 0 20 40 60 80 100 120
I
F
I
= 2.4mA
C
IF = 10mA
I
= 2mA
C
TA - Ambient Temperature (°C)
Fig. 3 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
TA = 25oC
= 10V
V
CE
= 5V
V
100
CE
CTR – Current Transfer Ratio (%)
10
0.1 1 10 100
IF - Forward Current (mA)
Fig. 5 Collector Current vs. Ambient Temperature
100
10
1
- Collector Current (mA)
C
I
0.1
(FODM121/2701/2705)
= 25mA
I
F
I
= 5mA
F
I
= 1mA
F
= 0.5mA
I
F
I
= 10mA
F
Fig. 4 Collector Current vs. Forward Current
100
TA = 25oC
10
1
- Collector Current (mA)
C
I
0.1
0.1 1 10 100
(FODM121/2701/2705)
= 10V
V
CE
IF - Forward Current (mA)
V
CE
Fig. 6 Collector Current vs. Collector-Emitter
Voltage
TA = 25oC
40
30
I
= 20mA
F
20
- Collector Current (mA)
C
I
10
(FODM121/2701/2705)
= 40mA
I
F
IF = 30mA
I
F
I
= 10mA
= 5mA
F
= 50mA
I
F
= 5V
VCE = 5V
0.01
-40 -20 0 20 40 60 80 100 120
TA - Ambient Temperature (°C)
0
0246810
VCE - Collector-Emitter Voltage (V)
= 1mA
I
F
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FODMXXX Rev. 1.1.4 4
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