Fairchild FOD817 service manual

1

2

4

3 EMITTER

COLLECTORANODE

CATHODE

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4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

DESCRIPTION

The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES

• Applicable to Pb-free IR reflow soldering

• Compact 4-pin package

• Current transfer ratio in selected groups:
FOD817: 50-600%
FOD817A: 80-160%
FOD817B: 130-260%
FOD817C: 200-400%
FOD817D: 300-600%

• C-UL, UL and VDE approved

• High input-output isolation voltage of 5000 Vrms

APPLICATIONS

FOD817 Series

•Power supply regulators

• Digital logic inputs

• Microprocessor inputs

4

1

FUNCTIONAL BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
Total Device Power Dissipation P

EMITTER

Continuous Forward Current I
Reverse Voltage V

LED Power Dissipation
Derate above 25°C

DETECTOR

Collector-Emitter Voltage V
Emitter-Collector Voltage V
Continuous Collector Current I

Detector Power Dissipation
Derate above 25°C

(T

= 25°C Unless otherwise specified.)

A

STG

OPR

SOL

D

F

R

P

D

CEO

ECO

C

P

D

-55 to +125 °C

-30 to +100 °C

260 for 10 sec °C

200 mW

50 mA

6V

70 mW

0.93 mW/°C

70 V

6V

50 mA

150 mW

2.0 mW/°C

© 2004 Fairchild Semiconductor Corporation

Page 1 of 9

8/19/04

Ω

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

ELECTRICAL CHARACTERISTICS

Series

(T

= 25°C Unless otherwise specified.)

A

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage
Reverse Leakage Current (V
Te r minal Capacitance (V = 0, f = 1 kHz) C

DETECTOR

Collector-Emitter Breakdown Voltage (I
Emitter-Collector Breakdown Voltage (I
Collector-Emitter Dark Current (V

*Typical values at T

= 25°C.

A

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

Current Transfer Ratio (I

Collector-Emitter
Saturation Voltage

AC Characteristic

Rise Time (I

Fall Time (I

= 5 mA, V

F

= 2 mA, V

C

= 2 mA, V

C

= 20 mA, I

(I

F

= 2 V, R

CE

= 2 V, R

CE

CE

(I

= 20 mA) V

F

= 4.0 V) I

R

= 0.1 mA, I

C

= 10 µA, I

E

= 20 V, I

CE

(T

= 25°C Unless otherwise specified.)

A

= 0) BV

F

= 0) BV

F

= 0) I

F

= 5 V) (note 1) CTR

= 1 mA) V

C

= 100 Ω ) (note 2) t

L

= 100 Ω ) (note 2) t

L

CE (SAT)

r

f

F

R

t

CEO

ECO

CEO

— 1.2 1.4 V

——10µA

–30250 pF

70 — — V

6– –V

—–100 nA

FOD817 50 — 600 %

FOD817A 80 — 160 %

FOD817B 130 — 260 %

FOD817C 200 — 400 %

FOD817D 300 — 600 %

— 0.1 0.2 V

—418µs

—318µs

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min V

Isolation Resistance (V

Isolation Capacitance (V

*Typical values at T

= 25°C.

A

NOTES

1. Current Transfer Ratio (CTR) = I

/I

C

F

x 100%.

2. For test circuit setup and waveforms, refer to page 4.

3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

© 2004 Fairchild Semiconductor Corporation

= 500 VDC) R

I-O

= 0, f = 1 MHz) C

I-O

Page 2 of 9

ISO

ISO

ISO

5000 Vac(rms)

5 x 10

10

10

11

0.6 1.0 pf

8/19/04

4-PIN PHOTOTRANSISTOR

OPTOCOUPLERS

FOD817

Series

Typical Electrical/Optical Characteristic Curves

Fig. 1 Forward Current

vs. Ambient Temperature

60

50

(mA)

F

40

30

20

10

FORWARD CURRENT I

0

-30 0 25 50 70 100 125
AMBIENT TEMPERATURE TA (°C)

Fig. 3 Collector-Emitted Saturation Voltage

vs. Forward Current

A

A

A

m
1

051015

FORWARD CURRENT IF (mA)

A

m

m

m

3

5

7

Ta = 25°C

(sat) (V)

VOLTAGE V

COLLECTOR-EMITTER SATURATION

CE

6

5

4

3

2

1

0

Fig. 2 Collector Power Dissipation

200

(mW)

C

150

100

50

0

COLLECTOR POWER DISSIPATION P

-30 0 25 50 70 100 125

Fig. 4 Forward Current vs. Forward Voltage

500

200

(mA)

F

100

50

20

10

5

FORWARD CURRENT I

2

1

0 0.5 1.0 1.5 2.0 2.5 3.0

(T

= 25°C Unless otherwise specified.)

A

vs. Ambient Temperature

AMBIENT TEMPERATURE TA (°C)

Ta =75°C

50°C

FORWARD VOLTAGE VF (V)

25°C

0°C

-25°C

Fig. 5 Current Transfer Ratio

200

180

160

140

120

100

80

60

40

20

CURRENT TRANSFER RATIO CTR ( %)

0

vs. Forward Current

12 51020 50

FORWARD CURRENT IF (mA)

© 2004 Fairchild Semiconductor Corporation

= 5V

V

CE

Ta = 25°C

Page 3 of 9

Fig. 6 Collector Current

vs. Collector-Emitter Voltage

30

= 30mA

I I

F

25

(mA)

C

20

15

10

5

COLLECTOR CURRENT I

0

0123456789

COLLECTOR-EMITTER VOLTAGE VCE (V)

20mA

10mA

5m A

Ta = 25°C

Pc(MAX.)

8/19/04