Fairchild FOD814 service manual

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

December 2011

Features

■

AC input response (FOD814 only)

■

Applicable to Pb-free IR reflow soldering Compact 4-pin package

■

Current transfer ratio in selected groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160%

FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600%

■

C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms

■

Minimum BV

■

Higher operating temperatures (versus H11AXXX

of 70V guaranteed

CEO

counterparts)

Applications

FOD814 Series

■

AC line monitor Unknown polarity DC sensor

■

Telephone line interface

■

FOD817 Series

Power supply regulators

■

Digital logic inputs Microprocessor inputs

■

Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Functional Block Diagram

1ANODE, CATHODE

2

FOD814 FOD817

4

COLLECTOR

3CATHODE, ANODE

EMITTER

CATHODE

1

2

4

COLLECTORANODE

3 EMITTER

4

1

Absolute Maximum Ratings

(TA = 25°C Unless otherwise speciﬁed.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Value Units

Symbol Parameter

TOTAL DEVICE

T

STG

T

OPR

T

SOL

T

J

θ

JC

P

TOT

EMITTER

I

F

V

R

P

D

DETECTOR

V

CEO

V

ECO

I

C

P

C

Storage Temperature -55 to +150 °C

Operating Temperature -55 to +105 -55 to +110 °C

Lead Solder Temperature 260 for 10 sec °C

Junction Temperature 125 Max. °C

Junction-to-Case Thermal Resistance 210 °C/W

Total Power Dissipation 200 mW

Continuous Forward Current ±50 50 mA

Reverse Voltage 6

Power Dissipation Derate above 100°C

Collector-Emitter Voltage 70 V

Emitter-Collector Voltage 6 V

Continuous Collector Current 50 mA

Collector Power Dissipation Derate above 90°C

FOD814 FOD817

70

1.7

150

2.9

mW

mW/°C

mW

mW/°C

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers

Electrical Characteristics

(TA = 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit

EMITTER

V

I

C

DETECTOR

I

CEO

BV

CEO

BV

ECO

DC Transfer Characteristics

Symbol

CTR Current Transfer

V

CE (sat)

Forward Voltage FOD814 IF = ±20mA 1.2 1.4 V

F

FOD817 IF = 20mA 1.2 1.4

Reverse Leakage Current FOD817 VR = 4.0V 10 µA

R

Te r minal Capacitance FOD814 V = 0, f = 1kHz 50 250 pF

t

FOD817 V = 0, f = 1kHz 30 250

Collector Dark Current FOD814 VCE = 20V, IF = 0 100 nA

FOD817 VCE = 20V, IF = 0 100

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

FOD814 IC = 0.1mA, IF = 0 70 V

FOD817 IC = 0.1mA, IF = 0 70

FOD814 IE = 10µA, IF = 0 6 V

FOD817 IE = 10µA, IF = 0 6

DC

Characteristic Device Test Conditions Min. Typ.* Max. Unit

(1)

20 300 %

50 600

Ratio

FOD814 IF = ±1mA, VCE = 5V

FOD814A 50 150

FOD817 IF = 5mA, VCE = 5V

FOD817A 80 160

FOD817B 130 260

FOD817C 200 400

FOD817D 300 600

Collector-Emitter Saturation Voltage

FOD814 IF = ±20mA, IC = 1mA 0.1 0.2 V

FOD817 IF = 20mA, IC = 1mA 0.1 0.2

AC Transfer Characteristics

Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit

f

Cut-Off Frequency FOD814 VCE = 5V, IC = 2mA, RL = 100Ω,

C

-3dB

Response Time (Rise) FOD814,

t

r

VCE = 2 V, IC = 2mA, RL = 100

(2)

Ω

FOD817

t

Response Time (Fall) FOD814,

f

FOD817

*Typical values at TA = 25°C

15 80 kHz

418µs

318µs

Electrical Characteristics

(TA = 25°C Unless otherwise speciﬁed.)

(Continued)

Isolation Characteristics

Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units

V

R

C

*Typical values at TA = 25°C

Notes:

1. Current Transfer Ratio (CTR) = IC/IF x 100%.

2. For test circuit setup and waveforms, refer to page 7.

3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.

Input-Output Isolation

ISO

(3)

Voltage

Isolation Resistance FOD814,

Isolation Capacitance FOD814,

FOD814, FOD817

FOD817

f = 60Hz, t = 1 min, I

≤ 2µA

I-O

V

= 500VDC 5x10

I-O

V

= 0, f = 1 MHz 0.6 1.0 pf

I-O

5000 Vac(rms)

10

1x10

11

Ω

FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers