Fairchild FOD617, FOD817 service manual
tm
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
May 2006
FOD814 Series, FOD617 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
AC input response (FOD814 only)
■
■
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
■
■
Current transfer ratio in selected groups:
FOD617A: 40–80% FOD817: 50–600%
FOD617B: 63–125% FOD817A:80–160%
FOD617C:100–200% FOD817B: 130–260%
FOD617D:160–320% FOD817C:200–400%
FOD814: 20–300% FOD817D:300–600%
FOD814A: 50–150%
C-UL, UL and VDE approved
■
■
High input-output isolation voltage of 5000Vrms
Minimum BV
■
■
Higher operating temperatures (versus H11AXXX
of 70V guaranteed
CEO
counterparts)
Applications
FOD814 Series
AC line monitor
■
■
Unknown polarity DC sensor
Telephone line interface
■
FOD617 and FOD817 Series
Power supply regulators
■
■
Digital logic inputs
Microprocessor inputs
■
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
1ANODE, CATHODE
2
FOD814 FOD617/817
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
4
COLLECTOR
3CATHODE, ANODE
EMITTER
CATHODE
1
2
1
4
COLLECTORANODE
3 EMITTER
4
1
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Absolute Maximum Ratings
Symbol Parameter
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
TOT
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
C
Storage Temperature -55 to +150 °C
Operating Temperature -55 to +105 -55 to +110 °C
Lead Solder Temperature 260 for 10 sec °C
Total Power Dissipation 200 mW
Continuous Forward Current ±50 50 mA
Reverse Voltage – 6
Power Dissipation
Derate above 100°C
Collector-Emitter Voltage 70 V
Emitter-Collector Voltage 6 6 (FOD817)
Continuous Collector Current 50 mA
Collector Power Dissipation
Derate above 90°C
(T
= 25°C Unless otherwise specified.)
A
FOD814 FOD617/817
Value Units
70
1.7
7 (FOD617)
150
2.9
mW
mW/°C
V
mW
mW/°C
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
2
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FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit
EMITTER
V
I
C
DETECTOR
I
CEO
BV
BV
Forward Voltage FOD814 I
F
FOD617 I
FOD817 I
Reverse Leakage Current FOD617 V
R
FOD817 V
Te r minal Capacitance FOD814 V = 0, f = 1kHz – 50 250 pF
t
= ±20mA – 1.2 1.4 V
F
= 60mA – 1.35 1.65
F
= 20mA – 1.2 1.4
F
= 6.0V – 0.001 10 µA
R
= 4.0V – – 10
R
FOD617 V = 0, f = 1kHz – 30 250
FOD817 V = 0, f = 1kHz – 30 250
Collector Dark Current FOD814 V
Collector-Emitter Breakdown
CEO
Voltage
Emitter-Collector Breakdown
ECO
Voltage
FOD617C/D V
FOD617A/B V
FOD817 V
FOD814 I
FOD617 I
FOD817 I
FOD814 I
FOD617 I
FOD817 I
= 20V, I
CE
= 10V, I
CE
= 10V, I
CE
= 20V, I
CE
= 0.1mA, I
C
= 100µA, I
C
= 0.1mA, I
C
= 10µA, I
E
= 10µA, I
E
= 10µA, I
E
= 0 – – 100 nA
F
= 0 – 1 100
F
= 0 – 1 50
F
= 0 – – 100
F
= 0 70 – – V
F
= 0 70 – –
F
= 0 70 – –
F
= 0 6 – – V
F
= 0 7 – –
F
= 0 6 – –
F
Transfer Characteristics (T
= 25°C Unless otherwise specified.)
A
Symbol DC Characteristic Device Test Conditions Min. Typ.* Max. Unit
CTR Current Transfer
Ratio
FOD814 I
= ±1mA, V
F
CE
FOD814A 50 – 150
FOD617A I
= 10mA, V
F
CE
= 5V
= 5V
(1)
(1)
20 – 300 %
40 – 80
FOD617B 63 – 125
FOD617C 100 – 200
FOD617D 160 – 320
FOD617A I
= 1mA, V
F
CE
= 5V
(1)
13 – –
FOD617B 22 – –
FOD617C 34 – –
FOD617D 56 – –
FOD817 I
= 5mA, V
F
CE
= 5V
(1)
50 – 600
FOD817A 80 – 160
FOD817B 130 – 260
FOD817C 200 – 400
FOD817D 300 – 600
V
CE (sat)
*Typical values at T
Collector-Emitter
Saturation Voltage
= 25°C
A
FOD814 I
FOD617 I
FOD817 I
= ±20mA, I
F
= 10mA, I
F
= 20mA, I
F
= 1mA – 0.1 0.2 V
C
= 2.5mA – – 0.4
C
= 1mA – 0.1 0.2
C
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
3
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≤
—
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Transfer Characteristics
(Continued) (T
= 25°C Unless otherwise specified.)
A
Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit
f
Cut-Off Frequency FOD814 V
C
= 5V, I
CE
= 2mA, R
C
= 100 Ω ,
L
15 80 – kHz
-3dB
t
Response Time (Rise) FOD814 V
r
= 2 V, I
CE
= 2mA, R
C
= 100 Ω
L
(2)
–418µs
FOD617
FOD817
Response Time (Fall) FOD814 – 3 18 µs
t
f
FOD617
FOD817
Isolation Characteristics
Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units
V
R
C
Input-Output Isolation
ISO
ISO
ISO
(3)
Voltage
Isolation Resistance FOD814 V
Isolation Capacitance FOD814 V
FOD814 f = 60Hz, t = 1 min,
I
2µA
FOD617
I-O
FOD817
= 500VDC 5x10
I-O
FOD617
FOD817
= 0, f = 1 MHz 0.6 1.0 pf
I-O
FOD617
FOD817
5000 Vac(rms)
10
1x10
11
Ω
*Typical values at T
= 25°C
A
Notes:
1. Current Transfer Ratio (CTR) = I
/I
C
F
x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
4
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