Fairchild FOD3180 service manual

FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler

August 2008

FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler

Features

Guaranteed operating temperature range of -40°C to

■

+100°C

■

2A minimum peak output current

■

High speed response: 200ns max propagation delay over temperature range

■

250kHz maximum switching speed

■

30ns typ pulse width distortion Wide V

■

5000Vrms, 1 minute isolation

■

Under voltage lockout protection (UVLO) with

operating range: 10V to 20V

CC

hysteresis Minimum creepage distance of 7.0mm

■

Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved

■

R

■

15kV/µs minimum common mode rejection

of 1.5 Ω (typ.) offers lower power dissipation

DS(ON)

Applications

■

Plasma Display Panel High performance DC/DC convertor

■

High performance switch mode power supply

■

High performance uninterruptible power supply Isolated Power MOSFET gate drive

■

*Requires ‘V’ ordering option

Description

The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETs used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters.

The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Functional Block Diagram Package Outlines

FOD3180

NO CONNECTION

ANODE

CATHODE

NO CONNECTION

Note:

A 0.1µF bypass capacitor must be connected between pins 5 and 8.

1

2

3

4

8

VCC

7

OUTPUT

6

5

VEE

8

1

8

1

8

1

FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler

Absolute Maximum Ratings

(T

= 25°C unless otherwise speciﬁed)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol

T

STG

T

OPR

T

J

T

SOL

I

F(AVG)

I

F(tr, tf)

I

F(TRAN)

V

R

I

OH(PEAK)

I

OL(PEAK)

V

– V

CC

V

O(PEAK)

P

O

P

D

EE

Parameter

Value Units

Storage Temperature -40 to +125 °C

Operating Temperature -40 to +100 °C

Junction Temperature -40 to +125 °C

Lead Solder Temperature 260 for 10 sec. °C

Average Input Current

(1)

25 mA

LED Current Minimum Rate of Rise/Fall 250 ns

Peak Transient Input Current (<1µs pulse width, 300pps) 1.0 A

Reverse Input Voltage 5 V

“High” Peak Output Current

“Low” Peak Output Current

(2)

2.5 A

(2)

2.5 A

Supply Voltage -0.5 to 25 V

Output Voltage 0 to V

Output Power Dissipation

Total Power Dissipation

(4)

250 mW

(5)

295 mW

CC

V

Recommended Operating Conditions

The Recommended Operating Conditions table deﬁnes the conditions for actual device operation. Recommended operating conditions are speciﬁed to ensure optimal performance to the datasheet speciﬁcations. Fairchild does not

recommend exceeding them or designing to absolute maximum ratings.

Symbol

V

– V

CC

I

F(ON)

V

F(OFF)

EE

Parameter

Power Supply 10 to 20 V

Input Current (ON) 10 to 16 mA

Input Voltage (OFF) -3.0 to 0.8 V

Value Units

∆

Electrical-Optical Characteristics (DC)

Over recommended operating conditions unless otherwise speciﬁed.

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

I

OH

I

OL

V

I

CCH

I

CCL

I

FLH

OH

OL

High Level Output Current

Low Level Output Current

High Level Output Voltage

Low Level Output Voltage

High Level Supply Current Output Open,

Low Level Supply Current Output Open,

Threshold Input Current Low to High

V

FHL

V

F

Threshold Input Voltage High to Low I

Input Forward Voltage I

F

/T

Temperature Coefﬁcient of Forward

A

Voltage

V

UVLO+

V

UVLO–

UVLO

BV

C

IN

UVLO Threshold V

UVLO Hysteresis 0.6 V

HYST

Input Reverse Breakdown Voltage I

R

Input Capacitance f = 1MHz, V

*Typical values at T

= 25°C

A

(2)(3)

(6)(7)

I

V

= (V

– V

OH

V

OH

V

OL

V

OL

I

O

CC

= (V

CC

= (V

CC

= (V

CC

= -100mA V

= 100mA V

– 1V) 0.5 A

EE

– V

– 3V) 2.0

EE

– V

– 1V) 0.5 A

EE

– V

– 3V) 2.0

EE

– 0.5 V

CC

+ 0.5 V

EE

4.8 6.0 mA

I

= 10 to 16mA

F

5.0 6.0 mA

V

= -3.0 to 0.8V

F

I

= 0mA, V

O

= 0mA, V

O

= 10mA 1.2 1.43 1.8 V

F

I

= 10mA -1.5 mV/°C

F

> 5V, I

O

V

< 5V, I

O

= 10µA 5 V

R

> 5V 8.0 mA

O

< 5V 0.8 V

O

= 10mA 8.3 V

F

= 10mA 7.7 V

F

= 0V 60 pF

F

FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler

Switching Characteristics

Over recommended operating conditions unless otherwise speciﬁed.

Symbol

t

P

DD

(t

PHL

t

UVLO ON

t

UVLO OFF

| CM

PLH

PHL

WD

– t

t

r

t

f

Parameter

Propagation Delay Time to High Output Level

Propagation Delay Time to Low Output Level

Pulse Width Distortion

Propagation Delay Difference Between Any

)

Two Pa rts

PLH

(10)

(9)

Test Conditions Min. Typ.* Max. Unit

(8)

I

F

R

(8)

50 105 200 ns

f = 250kHz, Duty Cycle = 50%, C

Rise Time CL = 10nF,

Fall Time 55 ns

R

UVLO Turn On Delay 2.0 µs

UVLO Turn Off Delay 0.3 µs

| Output High Level Common Mode Transient

H

Immunity

(11) (12)

TA = +25°C, I

f

V V

| CM

| Output Low Level Common Mode Transient

L

Immunity

(11) (13)

TA = +25°C, V V V

*Typical values at T

= 25°C

A

= 10mA,

= 10 Ω ,

g

= 10nF

g

= 10Ω

g

= 10 to 16mA,

= 1.5kV,

CM

= 20V

CC

= 0V,

f

= 1.5kV,

CM

= 20V

CC

50 135 200 ns

65 ns

-90 90 ns

75 ns

15 kV/µs

Isolation Characteristics

Symbol

V

R

C

*Typical values at T

Parameter

Withstand Isolation Voltage

ISO

Resistance (input to output)

I-O

Capacitance (input to output) Freq. = 1MHz 1 pF

I-O

= 25°C

A

(14) (15)

(15)

Test Conditions Min. Typ.* Max. Unit

TA = 25°C, R.H. < 50%, t = 1min., I

≤ 20µA

I-O

V

= 500V 10

I-O

5000 V

11

rms

Ω