Fairchild FMMT549 service manual
FMMT549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continuous.
• Sourced from process PB.
3
2
SuperSOT-23
1
Marking : 549
1. Base 2. Emitter 3. Collector
FMMT549 — PNP Low Saturation Transistor
August 2009
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
T
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Collector-Emitter Voltage -30 V
Collector-Base Voltage -35 V
Emitter-Base Voltage -5 V
Collector Current - Continuous
- Peak Pulse Current
Junction Temperature 150 °C
J
-1
-2
Storage Temperature Range -55 to +150 °C
A
A
Thermal Characteristics*
Symbol Parameter Value Unit
P
Total Device Dissipation, by R
D
θJA
Derate above 25°C
R
θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in2 of 2 oz copper.
500
4
250
mW
mW/°C
°C/W
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 1
FMMT549 — PNP Low Saturation Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Conditions Min. Max. Units
Off Characteristics
BV
BV
BV
I
CBO
I
EBO
On Characteristics*
h
V
CE
V
BE
V
BE
Small Signal Characteristics
C
* DC Item are tested by Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V
CEO
Collector-Base Breakdown Voltage IC = -100μA, IE = 0 -35 V
CBO
Emitter-Base Breakdown Voltage IE = -100μA, IC = 0 -5.0 V
EBO
Collector Cutoff Current V
= -30V, IE = 0
CB
V
= -30V, IE = 0, TA = 100°C
CB
-100
-10
Emitter Cutoff Current VEB= -4.0V, IC=0 -100 nA
DC Current Gain V
FE
= -2.0V, IC = -50mA
CE
= -2.0V, IC = -500mA
V
CE
V
= -2.0V, IC = -1A
CE
V
= -2.0V, IC = -2A
CE
(sat) Collector-Emitter Saturation Voltage IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
70
100
80
40
300
-500
-750
(sat) Base-Emitter Satu ration Voltage IC = -1A, IB = -100mA -1.25 V
(on) Base-Emitter On Voltage IC = -1A, V
Current Gain Bandwidth Product IC = -100mA, V
f
T
= -2.0V -1.0 V
CE
CE
= -5V,
100 MHz
f = 100MHz
Output Capacitance V
ob
= -10V, IE = 0, f = 1MHz 25 pF
CB
nA
μA
mV
mV
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. C1 2
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