Fairchild FMMT449 service manual

FMMT449

FMMT449

C

E
B

SuperSOTTM-3

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A

continuous. Sourced from Process NB.

Absolute Maximum Ratings* T

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Symbol

P

D

R

θJA

*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.

A = 25°C unless otherwise noted

ParameterSymbol

Collector Current - Continuous

- Peak Pulse Current

A = 25°C unless otherwise noted

Characteristic

Total Device Dissipation*
Derate above 25°C

FMMT449

2

Max

FMMT449

500

4

Units

V30Collector-Emitter Voltage
V50Collector-Base Voltage

V5Emitter-Base Voltage
A1

°C-55 to +150Operating and Storage Junction Temperature Range

Units

mW

mW/°C

°C/W250Thermal Resistance, Junction to Ambient

Page 1 of 2 1998Fairchild Semiconducto Corporation

fmmt449.lwpPrNB revA

ON

CHARACTERISTICS

*

NPN Low Saturation Transistor

FMMT449

(continued)

Electrical Characteristics T

OFF CHARACTERISTICS

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

CEO

CBO

EBO

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

A = 25°C unless otherwise noted

IC = 10 mA
IC = 1mA
IE = 100 µA
VCB = 40 V

VCB = 40 V, Ta=100°C
VEB = 4V

IC = 50 mA, VCE = 2V
IC = 500 mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V

IC = 1 A, IB = 100 mA
IC = 2 A, IB = 200 mA

70

100

80
40

100

10

100

300

500

1.0

UnitsMaxMinTest ConditionsParameterSymbol

V30
V50
V5

nA
uA

nA

-

mV

V

V
V

SMALL SIGNAL CHARACTERISTICS

C
f

T

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

BE(sat)

BE(on)

obo

Base-Emitter Saturation Voltage
Base-Emitter On Voltage

Output Capacitance
Transition Frequency

IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V

VCB = 10 V, IE = 0, f = 1MHz
IC = 50mA,VCE = 10 V, f=100MHz

V1.25
V1

pF15

MHz 150

Page 2 of 2 1998Fairchild Semiconducto Corporation

fmmt449.lwpPrNB revA