Fairchild FMG2G75US120 service manual

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FMG2G75US120

Molding Type Module

General Description

Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.

Features

• Short Circuit Rated Time; 10us @ TC =100°C, V

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

• Fast & Soft Anti-Parallel FWD

• UL Certified No.E209204

Application

• AC & DC Motor Controls

• General Purpose Inverters

• Weldings

• Servo Controls

•UPS

= 2.6 V @ IC = 75A

CE(sat)

GE

FMG2G75US120

IGBT

= 15V

Package Code : 7PM-GA

E1/C2

C1 E2

G1 E1 G2 E2

Internal Circuit Diagram

Absolute Maximum Ratings T

Symbol Description FMG2G75US120 Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

SC

T

J

T

STG

V

ISO

Mounting Torque

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A

Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 20 V
Collector Current 75 A
Pulsed Collector Current 150 A
Diode Continuous Forward Current 75 A
Diode Maximum Forward Current 150 A
Maximum Power Dissipation 445 W
Short Circuit Withstand Time @ TC = 100°C10 us

Operating Junction Temperature -40 to +150 °C

Storage Temperature Range -40 to +125 °C

Isolation Voltage @ AC 1minute 2500 V

Power Terminal Screw : M5 4.0 N.m
Mounting Screw : M5 4.0 N.m

= 25°C unless otherwise noted

C

FMG2G75US120

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 3mA 1200 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
Gate - Emitter Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 3 mA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

Gate - Emitter Threshold Voltage IC =75mA, VCE = V

GE

5.0 7.0 8.5 V

Collector to Emitter Saturation Voltage IC = 75A, VGE = 15V -- 2.6 3.0 V

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E
E
t

d(on)

t

r

t

d(off)

t

f

E
E

T

sc

Q
Q
Q

on

off

on

off

g

ge

gc

Turn-On Delay Time
Rise Time -- 80 -- ns
Turn-Off Delay Time -- 295 -- ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 6.9 -- mJ

V

= 600 V, IC =75A,

CC

= 10Ω, V

R

G

Inductive Load, T

GE

= 15V,

= 25°C

C

-- 75 -- ns

Turn-Off Switching Loss -- 4.3 -- mJ
Turn-On Delay Time
Rise Time -- 80 -- ns
Turn-Off Delay Time -- 310 -- ns
Fall Time -- 70 -- ns
Turn-On Switching Loss -- 8.4 -- mJ

V

= 600 V, IC = 75A,

CC

=10Ω, V

R

G

Inductive Load, T

GE

= 15V,

= 125°C

C

-- 80 -- ns

Turn-Off Switching Loss -- 5.6 -- mJ

Short Circuit Withstand Time

Total Gate Charge
Gate-Emitter Charge -- 90 -- nC
Gate-Collector Charge -- 310 -- nC

VCC = 600 V, V

@ T

= 100°C

C

= 300 V, IC =75A,

V

CE

V

= 15V

GE

GE

= 15V

10 -- -- us

-- 570 -- nC

Electrical Characteristics of DIODE T

Symbol Parameter Test Conditions Min. Typ. Max.

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 75A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

= 25°C unless otherwise noted

C

I

= 75A

F

di / dt = 1000 A/us

T

C

T

C

T

C

T

C

T

C

T

C

T

C

T

C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

-- 2.3 3.0

-- 2.2 --

-- 150 --

-- 225 --

-- 47 --

-- 61 --

-- 3525

-- 6863 --

Unit

s

V

ns

A

nC

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJC

R

θJC

Weight Weight of Module 240 -- g

©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A

Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.28 °C/W
Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.34 °C/W
Case-to-Sink (Conductive grease applied) 0.035 -- °C/W

160

Common Emitter

140

VGE = 15V
TC = 25 

120

]

TC = 125 ------

A
[

C

100

I
,

t
n
e

8

0

r

r
u

C

6

0

r
o
t
c

4

0

e
l

l
o

C

2

0

0

0.00.51.01.52.02.53.03.54.0

Collector - Emitter Voltage,

160

Common Emitter

140

TC = 25 

]

120

A
[

C

I

100

,

t
n
e

8

0

r

r

V

[V

]

C

E

u
C

6

0

r
o
t
c
e

4

0

l

l
o

C

2

0

0

0.00.51.01.52.02.53.03.

Collector - Emitter Voltage,

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

15V

V

20V

C

E

VGE = 10V

[V

]

FMG2G75US120

12V

5

160

Common Emitter

140

TC = 125 

120

]
A
[

100

C

I
,

t
n

8

0

e
r

r
u

6

0

C
r

o
t

4

0

c
e

l

l
o

2

0

C

0

0.00.51.01.52.02.53.03.

Collector - Emitter Voltage,

Fig 3. Typical Saturation Voltage
Characteristics

Common Emitter

= ± 15 V, RG = 10Ω

V

GE

100

0

100

TC = 25 
TC = 125 ------

]
s
n
[

e
m

i
T

g
n

i
h

c
t

i
w

S

15V

20V

V

C

VGE = 10V

[V

E

5.0

Common Emitter

4.5

VGE = 15V

4.0

]
A
[

C

3.5

I
,

t

12V

5

]

n
e

3.0

r

r
u

C

2.5

r
o
t
c

2.0

e
l

l
o

C

1.5

1.0
2

5

5

0

7

5

Case Temperature, TC

[0C

150A

100A

75A

IC = 40A

100

125

]

Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level

Common Emitter

= ± 15 V, RG = 10Ω

V

GE

TC = 25 

100

0

]
s
n
[

Ton

T

r

e
m

i
T

g
n

i
h

c
t

i
w

S

100

TC = 125 ------

Tof

f

T

f

1

0

3

0

4

0

5

0

6

0

7

0

8

0

Collector Current,

IC [A

90100

]

Fig 5. Turn-On Characteristics vs.
Collector Current

©2004 Fairchild Semiconductor Corporation FMG2G75US120 Rev. A

1

0

3

0

4

0

5

0

6

0

7

0

8

Collector Current,

0

IC [A

Fig 6. Turn-Off Characteristics vs.
Collector Current

9

0

100

]