Fairchild FMBS2383 service manual

FMBS2383
NPN Epitaxial Silicon Transistor

Features

• Power Amplifier

• Collector-Emitter Voltage : V

• Current Gain Bandwidth Product : f

CEO

=160V

=120MHz

T

FMBS2383 — NPN Epitaxial Silicon Transistor

April 2011

E

C

C

SuperSOTTM-6

Marking : 2383

Absolute Maximum Ratings T

B

C

C

= 25°C unless otherwise noted

a

1

2

3

6

5

4

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

B

P

D

R

θJA

T

J

T

STG

* note1) : Minimum land pattern size

Electrical Characteristics T

Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 5 V
Collector Current 800 mA
Base Current 160 mA
Power Dissipation 630 mW

* Thermal Resistance, Junction to Ambient 200 °C/W

Junction Temperature 150 °C
Storage Temperature -55 to +150 °C

= 25°C unless otherwise noted

a

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.0 V

V

CE

V

(on) Base-Emitter On Voltage V

BE

f

T

C

ob

Collector-Base Breakdown Voltage IC = 10μA, IB = 0 160 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 160 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V

Current Gain Bandwidth Product V
Output Capacitance V

= 120V, IE = 0 100 nA

CB

= 5V, IC = 0 100 nA

BE

= 5V, IC = 100mA 80 160

CE

= 5V, IC = 500mA 1.0 V

CE

= 5V, IC = 100mA 120 MHz

CE

= 10V, IE = 0, f = 1MHz 30 pF

CB

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS2383 Rev. A0 1

Typical Performance Characteristics

FMBS2383 — NPN Epitaxial Silicon Transistor

1000

TA = 125 oC

100

, DC CURRENT GAIN

FE

h

Ta = 25 oC

10

1 10 100 1000

TA = 100 oC

TA = 75 oC

IC [mA], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

10

TA = 25 oC

1

TA = 75 oC

VCE = 5V

IC = 10 I

1

0.1

TA = 25 oC

(sat),[V] SATURATION VOLTAGE

CE

V

0.01
1 10 100 1000

TA = 100 oC

TA = 75 oC

TA = 125 oC

IC = 10 I

B

IC [mA], COLLECTOR CURRENT

500

B

400

300

200

VCE = 5V

TA = 125 oC

TA = 100 oC

TA = 75 oC

(sat)[V], SATURATION VOLTAGE

BE

V

TA = 100 oC

0.1
1 10 100 1000

TA = 125 oC

IC [mA], COLLECTOR CURRENT

100

[mA], COLLECTOR CURRENT

C

I

0

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VBE(on) [V], BASE-EMITTER ON VOLTAGE

TA = 25 oC

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

100

100

TA = 125 oC

10

TA = 100 oC

1

TA = 75 oC

0.1

[nA], Collector Cut-off Current

CBO

I

0.01
10 100

TA = 25 oC

VCB [V], Colle c to r -B ase Voltage

10

1

0.1

0.01

[nA], Emitter Cut-off Current

EBO

I

1E-3

12345678910

TA = 125 oC

TA = 100 oC

TA = 75 oC

TA = 25 oC

VEB [V], Emitter-Base Voltage

Figure 5. Collector-Base Cutoff Current Figure 6. Emitter-Base Cutoff Current

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS2383 Rev. A0 2