Fairchild FMBM5551 service manual
FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
C2
E1
C1
E2
B1
pin #1
SuperSOTTM-6
Mark: .3S2
Dot denotes pin #1
Absolute Maximum Ratings *
FMBM5551 — NPN General Purpose Amplifier
September 2008
B2
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
T
qJA
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics T
Collector-Emitter Voltage 160 V
Collector-Base Voltage 180 V
Emitter-Base Voltage 6 V
Collector Current (DC) 600 mA
Collector Dissipation (TC = 25°C) 0.7 W
Junction Temperature 150 °C
Storage Temperature Range -55 ~ 150 °C
Thermal Resistance, Junction to Ambient 180 °C/W
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Max Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
On Characteristics
h
FE1
DIVID1 Variation Ratio of h
h
FE2
DIVID2 Variation Ratio of h
Collector-Emitter Voltage IC = 1mA, IB = 0 160 V
Collector-Base Voltage IC = 100mA, IE = 0 180 V
Emitter-Base Voltage IC = 10mA, IC = 0 6 V
Collector Cut-off Current VCB = 120V
VCB = 120V, Ta = 100°C
50
50
Emitter Cut-off Current VEB = 4V 50 nA
DC Current Gain VCE = 5V, IC = 1mA 80
Between Die 1 and Die 2 h
FE1
FE1
(Die1)/h
(Die2) 0.9 1.1
FE1
DC Current Gain VCE = 5V, IC = 10mA 80 250
Between Die 1 and Die 2 h
FE2
FE2
(Die1)/h
(Die2) 0.95 1.05
FE2
nA
mA
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 1
FMBM5551 — NPN General Purpose Amplifier
Electrical Characteristics (Continued) T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Max Units
h
FE3
DIVID3 Variation Ratio of h
V
CE(sat)
V
BE(sat)
V
BE(on)
DEL Difference of V
Small Signal Characteristics
C
ob
C
ib
f
T
NF Noise Figure VCE = 5V, IC = 200mA, f = 1MHz,
h
fe
DC Current Gain VCE = 5V, IC = 50mA 30
Between Die 1 and Die 2 h
FE3
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
FE3
(Die1)/h
(Die2) 0.9 1.1
FE3
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
0.15
0.2
1
1
Base-Emitter On Voltage VCE = 5V, IC = 10mA 1 V
Between Die1 and Die 2 V
BE(on)
BE(on)
(Die1)-V
(Die2) -8 8 mV
BE(on)
Output Capacitance VCB = 10V, f = 1MHz 6 pF
Input Capacitance VCB = 0.5V, f = 1MHz 20 pF
Current Gain Bandwidth Product VCE = 10V, IC = 10mA, f =
100 300 MHz
100MHz
8 dB
RS = 20KW, B = 200Hz
Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz 50 250
V
V
V
V
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 2
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