FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
C2
E1
C1
E2
B1
pin #1
SuperSOTTM-6
Mark: .3S2
Dot denotes pin #1
Absolute Maximum Ratings *
FMBM5551 — NPN General Purpose Amplifier
September 2008
B2
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
T
qJA
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics T
Collector-Emitter Voltage 160 V
Collector-Base Voltage 180 V
Emitter-Base Voltage 6 V
Collector Current (DC) 600 mA
Collector Dissipation (TC = 25°C) 0.7 W
Junction Temperature 150 °C
Storage Temperature Range -55 ~ 150 °C
Thermal Resistance, Junction to Ambient 180 °C/W
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Max Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
On Characteristics
h
FE1
DIVID1 Variation Ratio of h
h
FE2
DIVID2 Variation Ratio of h
Collector-Emitter Voltage IC = 1mA, IB = 0 160 V
Collector-Base Voltage IC = 100mA, IE = 0 180 V
Emitter-Base Voltage IC = 10mA, IC = 0 6 V
Collector Cut-off Current VCB = 120V
VCB = 120V, Ta = 100°C
50
50
Emitter Cut-off Current VEB = 4V 50 nA
DC Current Gain VCE = 5V, IC = 1mA 80
Between Die 1 and Die 2 h
FE1
FE1
(Die1)/h
(Die2) 0.9 1.1
FE1
DC Current Gain VCE = 5V, IC = 10mA 80 250
Between Die 1 and Die 2 h
FE2
FE2
(Die1)/h
(Die2) 0.95 1.05
FE2
nA
mA
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 1
FMBM5551 — NPN General Purpose Amplifier
Electrical Characteristics (Continued) T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Max Units
h
FE3
DIVID3 Variation Ratio of h
V
CE(sat)
V
BE(sat)
V
BE(on)
DEL Difference of V
Small Signal Characteristics
C
ob
C
ib
f
T
NF Noise Figure VCE = 5V, IC = 200mA, f = 1MHz,
h
fe
DC Current Gain VCE = 5V, IC = 50mA 30
Between Die 1 and Die 2 h
FE3
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
FE3
(Die1)/h
(Die2) 0.9 1.1
FE3
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
0.15
0.2
1
1
Base-Emitter On Voltage VCE = 5V, IC = 10mA 1 V
Between Die1 and Die 2 V
BE(on)
BE(on)
(Die1)-V
(Die2) -8 8 mV
BE(on)
Output Capacitance VCB = 10V, f = 1MHz 6 pF
Input Capacitance VCB = 0.5V, f = 1MHz 20 pF
Current Gain Bandwidth Product VCE = 10V, IC = 10mA, f =
100 300 MHz
100MHz
8 dB
RS = 20KW, B = 200Hz
Small Signal Current Gain VCE = 10V, IC = 1.0mA, f = 1.0KHz 50 250
V
V
V
V
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 2
Typical Characteristics
FMBM5551 — NPN General Purpose Amplifier
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 3
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Typical Characteristics (Continued)
FMBM5551 — NPN General Purpose Amplifier
Figure 1. Input and Output Capacitance
vs Reverse Voltage
Figure 2. Small Signal current Gain
vs Collector Current
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 4
Mechanical Dimensions
FMBM5551 — NPN General Purpose Amplifier
SuperSOTTM-6
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. 1.0.0 5
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FMBM5551 NPN General Purpose AmplifierFMBM5551
DISCLAIMER
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
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PRODUCTS.
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As used herein:
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which, (a) are intended for surgical implant into the body, or
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBM5551 Rev. A1 6
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