Fairchild FFB3904, FMB3904, MMPQ3904 service manual

FFB3904 / FMB3904 / MMPQ3904

FFB3904

E2

B2

C1

SC70-6

Mark: .1A

NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.

pin #1

C2

B1

E1

FMB3904

C2

E1

C1

B1

pin #1

SuperSOT-6

Mark: .1A

Dot denotes pin #1

B2

E2

MMPQ3904

B2

E2

B1

E1

SOIC-16

Mark: MMPQ3904

pin #1

B4

E4

B3

E3

C3

C3

C2

C2

C1

C1

NPN Multi-Chip General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings* T

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150

= 25°C unless otherwise noted

A

C

°

C4

C4

4

Thermal Characteristics T

= 25°C unless otherwise noted

A

Symbol Characteristic Max Units

FFB3904 FMB3904 MMPQ3904

P

D

R

JA

θ

 1998 Fairchild Semiconductor Corporation

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Effective 4 Die
Each Die

300

2.4

700

5.6

415 180

1,000

8.0

125
240

mW

mW/°C

C/W

°

C/W

°

C/W

°

NPN Multi-Chip General Purpose Amplifier

(continued)

FFB3904 / FMB3904 / MMPQ3904

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

Collector-Emitter B reakdown Voltage IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Volt age

I

= 10 µA, IE = 0

C

I

= 10 µA, IC = 0

E

Base Cutoff Current VCE = 30 V, V

= 0 50 nA

EB

60 V

6.0 V

Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA

ON CHARACTERISTICS*

h

FE

V
V

CE(sat)

BE(sat)

DC Current Gain IC = 0.1 mA, VCE = 1.0 V

MMPQ3904

I

= 1.0 mA, VCE = 1.0 V

C

MMPQ3904

= 10 mA, VCE = 1.0 V

I

C

MMPQ3904

I

= 50 mA, VCE = 1.0 V

C

= 100 mA, VCE = 1.0 V

I

C

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

= 50 mA, IB = 5.0 mA

I

C

40
30
70
50

100

300
75
60
30

0.2

0.3

0.65 0.85

0.95

V
V
V
V

SMALL SIGNAL CHARACTERISTICS (MMPQ3904 only)

f

T

C

obo

C

ibo

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

f = 100 MHz

Output Capacitance VCB = 5.0 V, IE = 0,

f = 140 kHz

Input Capacitance VEB = 0.5 V, IC = 0,

f = 140 kHz

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

250 MHz

4.0 pF

8.0 pF

T ypical Characteristics

FFB3904 / FMB3904 / MMPQ3904

NPN Multi-Chip General Purpose Amplifier

(continued)

Typical Puls ed Curr ent Gain

vs Collector Current

500

V = 5V

400

300

200

100

0

0.1 1 10 1 00

FE

h - TYPI CA L PULSE D CU RRENT GAIN

125 °C

25 °C

- 40 °C

I - COLLECTOR CURRENT (mA)

C

CE

Base-Emitter Saturation

Voltage vs Collector Current

1

β = 10

- 40 °C

0.8

25 °C

0.6

125 °C

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation

Voltage vs Collector Curren t

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

0.15

0.1

0.05

= 10

β

125 °C

25 °C

- 40 °C

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Base-Emitter ON Voltage vs

Collector Current

1

V = 5V

CE

0.8

0.6

0.4

0.2

0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

4

Collector-Cutoff Current

vs Ambient Temperature

500

V = 30V

100

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Capacitance vs

Reverse Bias Voltage

10

5
4

3

2

CAPACITANCE (pF)

1

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ibo

C

obo