Fairchild FMB100 service manual

FMB100

C2

E1

C1

B2

E2

B1

pin #1

SuperSOT-6

Mark: .NA

Dot denotes pin #1

NPN Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 10.

FMB100

Absolute Maximum Ratings* T

=25°C unless otherwise noted

A

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emitter V ol tage 45 V
Collector-Base Voltage 75 V
Emitter-Base Volt age 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

= 25°C unless otherwise noted

A

Symbol Characteristic Max Units

FMB100

P

D

R

JA

θ

Total Device Dissipation

Derate above 25°C

700

5.6

Thermal Resistance, Junction to Ambient 180

mW

mW/°C

C/W

°

4

 1998 Fairchild Semiconductor Corporation

NPN Multi-Chip General Purpose Amplifier

(continued)

FMB100

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV
BV

BV
I

CBO

I

CES

I

EBO

CBO
CEO

EBO

Collector-Base Breakdown Voltage
Collector-Emitte r Break down

I

= 10 µA, IB = 0

C

IC = 1 mA, IE = 0 45 V

75 V

Voltage*
Emitter-Base Breakdown Voltage

I

= 10 µA, IC = 0

E

6.0 V
Collector Cutoff Current VCB = 60 V 50 nA
Collector Cutoff Current VCE = 40 V 50 nA
Emitter Cutoff Current VEB = 4 V 50 nA

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

sat

BE(

DC Current Gain

Collector-Emi tter Saturation Volt age IC = 10 mA, IB = 1.0 mA

)

Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

)

I

= 100 µA, VCE = 1.0 V

C

= 10 mA, VCE = 1.0 V

I

C

= 100 mA, VCE = 1.0 V*

I

C

= 150 mA, VCE = 5.0 V*

I

C

= 200 mA, IB = 20 mA*

I

C

= 200 mA, IB = 20 mA*

I

C

80
100
100
100

450
350

0.2

0.4

0.85

1.0

V
V
V
V

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

NF Noise Figure

Current Gain - Bandwidth Product V

= 20 V, IC = 20 mA 300 MHz

CE

Output Capacitance VCB = 5.0 V, f = 1.0 MHz 3.5 pF

I

= 100 µA, VCE = 5.0 V,

C

R

= 2.0 kΩ, f = 1.0 kHz

G

2.5 dB

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

T ypical Characteristics

Typical Pulsed Current Gain

vs Collector Current

400

300

200

100

0

FE

10 20 30 50 100 200 300 500

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

I - COLLECTOR CURRENT (mA)

C

Vce = 5V

Collector-Emitter Saturation
Voltage vs Collector Current

0.4

= 10

β

0.3

125 °C

25 °C

- 40 °C

0.2

0.1

110100400

CESAT

V - COLLECTOR- EMITTER VOLTAGE (V)

I - COLLECTO R CUR RENT (mA)

C