Fairchild FKN08PN60S service manual

FKN08PN60S

TRIAC (Silicon Bidirectional Thyristor)

Application Explanation

• Switching mode power supply, light dimmer, electric flasher unit, hair drier

• TV sets, stereo, refrigerator, washing machine

• Electric blanket, solenoid driver, small motor control

• Photo copier, electric tool

3

1

1 2 3

TO-92

FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor)

February 2008

1: T

1

2: Gate
3: T

2

2

Absolute Maximum Ratings T

= 25°C unless otherwise noted

a

Symbol Parameter Value Rating Units

V

DRM

V

RRM

I

T (RMS)

I

TSM

I2t I2t for Fusing Value corresponding to halfwave,

P

GM

P

G (AV)

V

GM

I

GM

T

J

T

STG

Peak Repetitive Off-State Voltage

Sine Wave 50 to 60Hz, Gate Open

RMS On-State Current Commercial frequency, sine full wave

600 V

0.8 A

360° conduction, Tc= 70℃

Surge On-State Current Sinewave half cycle, peak value,

60Hz 8 A

non-repetitive

0.26 A2s

surge on-state current, tp=8.33ms
Peak Gate Power Dissipation 5 W
Average Gate Power Dissipation 0.1 W
Peak Gate Voltage 5 V
Peak Gate Current 1 A
Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 125 °C

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

R

θJA

Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

(note1)

(note2)

45

160

°C/W
°C/W

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FKN08PN60S Rev. 1.0.0 1

FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor)

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Condition

I

DRM

I

RRM

V

TM

V

GT

I

GT

V

GD

I

H

I

L

dv/dt(s) Critical Rate of Rise of

dv/dt(c) Critical-Rate of Rise of Off-State Com-

Repetieive Peak Off-State Current V

DRM/VRRM

applied - - 100 μA

On-State Voltage TC=25°C, ITM=1.12A

Instantaneous measurement

Gate Trigger Voltage

(Note 2)

I

VD=12V , RL=100Ω

II T2(+), Gate (-) - - 2.0 V

III T2(-), Gate (-) - - 2.0 V

Gate Trigger Current

(Note 2)

I

VD=12V , RL=100Ω

II T2(+), Gate (-) - - 5 mA

III T2(-), Gate (-) - - 5 mA

Gate Non-Trigger Voltage TJ=125°C, VD=1/2V

DRM

Holding Current (I, II,III) VD = 12V, ITM = 200mA - - 15 mA
Latching Current I, III VD = 12V, IG = 10mA - - 15 mA

II - - 20 mA

V

= 63% Rated, Tj = 125°C,

Off-State Voltag

DRM

Exponential Rise

mutating Voltage (di/dt=-0.7A/uS)

Commutation dv/dt test

Min. Typ. Max. Units

- - 1.8 V

T2(+), Gate (+) - - 2.0 V

T2(+), Gate (+) - - 5 mA

0.2 - - V

20 - - V/μs

3.0 - - V/μs

V

DRM

(V)

Test Condition

FKN08PN60S 1. Junction Temperature

TJ=125°C

2. Rate of decay of on-state
commutating current (di/dt)C

3. Peak off-state voltage
VD = 300V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Main Current

Main Voltage

(dv/dt)

C

(di/dt)

Time

C

Time

Time

V

D

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FKN08PN60S Rev. 1.0.0 2

Quadrant Definitions for a Triac

FKN08PN60S — TRIAC (Silicon Bidirectional Thyristor)

T2 Positive

+

(+) I
GATE

(+) I
GATE

(+) T2

GT

T1

GT

(-) T2

GT

T1

(+) T2

Quadrant II Quadrant I

Quadrant III Quadrant IV

(-) I

GT

GATE

T1

IGT -+ I

(-) T2

(-) I

GT

GATE

T1

-

T2 Negative

Package Marking and Ordering Information

Device Marking Device Package Packing Tape Width Quantity

K08PN60S FKN08PN60S TO-92 BULK -- --

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FKN08PN60S Rev. 1.0.0 3