Fairchild FJY3014R service manual
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FJY3014R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=47KΩ)
• Complement to FJY4014R
C
C
FJY3014R NPN Epitaxial Silicon Transistor
November 2006
Eqivalent Circuit
SOT - 523F
E
B
S14
BE
Absolute Maximum Ratings * T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
Collector Current 100 mA
C
T
STG
T
J
P
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T
Collector-Base Voltage 50 V
Collector-Emitter Vo ltage 50 V
Emitter-Base Voltage 10 V
Storage Temperature Range -55~150 °C
Junction Temperature 150 °C
Collector Power Dissipation, by R
a
Symbol Parameter Max Units
R
θJA
* Minimum land pad.
Thermal Resistance, Junction to Ambient 600 °C/W
Electrical Characteristics* T
Symbol Parameter Test Condition MIN Typ MAX Units
V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 50 V
V(BR)CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 50 V
ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 uA
hFE DC Current Gain VCE = 5 V, IC = 5 mA 68
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V
fT Current Gain - Bandwidth Product VCE = 10V, IC = 5 mA 250 MHz
Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF
VI(off) Input Off Voltage VCE = 5 V, IC = 100uA 0.5 V
VI(on) Input On Voltage VCE = 0.2V, IC = 5mA 1.3 V
R1 Input Resistor 3.2 4.7 6.2 KΩ
R1/R2 Resistor Ratio 0.09 0.1 0.11
* Pulse Test: PW≤300µs, Duty Cycle≤2%
= 25°C unless otherwise noted
a
θJA
=25°C unless otherwise noted
= 25°C unless otherwise noted
C
200 mW
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJY3014R Rev. A
Typical Performance Characteristics
FJY3014R NPN Epitaxial Silicon Transistor
Figure 1. DC current Gain Figure 2. Input On Voltage
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VCE = 5V
R1 = 4.7K
R2 = 47K
10
1
(on)[V], INPUT VOLTAGE
I
V
0.1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Power Derating
1000
100
10
(sat)[mV], SATURATION VOLTAGE
CE
V
1
1 10 100
IC[mA], COLLECTOR CURRENT
IC = 10I
R1 = 4.7K
R2 = 47K
280
B
240
200
160
120
80
[mW], POWER DISSIPATION
C
40
P
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
VCE =0.3V
R1 = 4.7K
R2 = 47K
FJY3014R Rev. A
2 www.fairchildsemi.com
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