Fairchild FJX3904 service manual
FJX3904
NPN Epitaxial Silicon Transistor
FJX3904 NPN Epitaxial Silicon Transistor
January 2007
• General Purpose Transistor
3
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics* T
Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature -55 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Conditions Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
VCE(sat) * Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
VBE(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA
C
ob
f
T
NF Noise Figure IC=100µA, VCE=5V, RS=1KΩ
t
ON
t
OFF
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Base Breakdown Voltage IC=10µA, IE=0 60 V
* Collector-Emitter Breakdown Voltage IC=1mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCE=30V, VEB=3V 50 nA
* DC Current Gain VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
40
70
100
60
30
300
0.2
IC=50mA, IB=5mA
0.3
0.65 0.85
IC=50mA, IB=5mA
0.95
Output Capacitance VCB=5V, IE=0, f=1MHz 4 pF
Current Gain Bandwidth Product VCE=20V, IC=10mA 300 MHz
5 dB
f=10Hz to 15.7KHz
Turn On Time VCC=3V, VBE=0.5V
70 ns
IC=10mA, IB1=1mA
Turn Off Time VCC=3V, IC=10mA
250 ns
IB1=IB2=1mA
2
SOT-323
V
V
V
V
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJX3904 Rev. B
Package Marking and Ordering Information
Device Item (note) Device Marking Package Packing Method Qty(pcs)
FJX3904TF S1A SOT-323 TAPE & REEL 3,000
Note : The Suffix “-TF” means Tape& Reel packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging
Typical Performance Characteristics
FJX3904 NPN Epitaxial Silicon Transistor
240
200
160
120
80
, DC CURRENT GAIN
FE
h
40
0
0.1 1 10 100
VCE = 1V
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
6
5
4
3
2
[pF], CAPACITANCE
ob
C
1
0
110100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
10
IC = 10 I
B
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VBE(sat)
VCE(sat)
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
VCE = 20V
100
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
FJX3904 Rev. B
Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product
2 www.fairchildsemi.com
Loading...