Fairchild FJX2222A service manual
FJX2222A
NPN Epitaxial Silicon Transistor
Features
• General Purpose Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
C
= 40V
CEO
(max) = 325mW
FJX2222A — NPN Epitaxial Silicon Transistor
May 2010
3
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T
2
1
SOT-323
= 25°C unless otherwise noted
a
Marking
S1P
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics T
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 325 mW
Junction Temperature 150 °C
Storage Temperature 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
CE
V
(sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA
BE
f
T
Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=60V, IE=0 0.01 µA
* DC Current Gain VCE=10V, IC=0.1mA
=10V, IC=1mA
V
CE
=10V, IC=10mA
V
CE
=10V, IC=150mA
V
CE
=10V, IC=500mA
V
CE
35
50
75
100
40
300
0.3
=500mA, IB=50mA
I
C
1.0
0.6 1.2
=500mA, IB=50mA
I
C
Current Gain Bandwidth Product IC=20mA, VCE=20V,
300 MHz
2.0
f=100MHz
V
V
V
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJX2222A Rev. B2 1
FJX2222A — NPN Epitaxial Silicon Transistor
Electrical Characteristics (Continued) T
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Max. Units
C
ob
NF Noise Figure I
t
ON
t
OFF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Output Capacitance VCB=10V, IE=0, f=1MHz 4 8 pF
=100µA, VCE=10V,
C
=1KΩ, f=1kHz
R
S
Turn On Time VCC=30V, IC=150mA,
=0.5V, IB1=15mA
V
BE
Turn Off Time VCC=30V, IC=150mA,
=15mA
I
B1=IB2
4dB
35 ns
285 ns
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJX2222A Rev. B2 2
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