Fairchild FJV42 service manual
FJV42
NPN High Voltage Transistor
3
1. Base 2. Emitter 3. Collector
SOT-23
1
Marking: 1DF
FJV42 NPN High Voltage Transistor
March 2007
2
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
Collector Current 500 mA
C
T
STG
P
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Collector-Base Voltage 350 V
Collector-Emitter Vo ltage 350 V
Emitter-Base Voltage 6 V
Storage Temperature Range -55~150 °C
Collector Power Dissipation 350 mW
Thermal Characteristics
Symbol Parameter Value Units
RTH(j-a)
Electrical Characteristics T
Symbol Parameter Test Condition MIN MAX Units
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 350 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 350 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 6 V
ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 uA
IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 uA
hFE DC Current Gain* IC = 1.0 mA, VCE = 10 V
VCE(sat) Collector-Emitter Saturation Voltage * IC = 20 mA, IB = 2.0 mA 0.5 V
VBE(sat) Base-Emitter Breakdown Voltage * IC = 20 mA, IB = 2.0 mA 0.9 V
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20V, f =100 MHz 50 MHz
Ccb Output Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3 pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Thermal Resistance, Junction to Ambiet 357 °C/W
= 25°C unless otherwise noted
C
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
40
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJV42 Rev. A
Typical Characteristics
FJV42 NPN High Voltage Transistor
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
110100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
cb
C
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
110100
VBE(sat)
VCE(sat)
IC = 10 I
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
120
100
VCE = 20V
80
60
[MHz],
T
f
40
20
CURRENT GAIN BANDWIDTH PRODUCT
0
110100
IC[mA], COLLECTOR CURRENT
B
FJV42 Rev. A
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
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