Fairchild FJT44 service manual
FJT44
NPN Epitaxial Silicon Transistor
Features
• High Voltage Transistor
December 2009
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
FJT44 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
=25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* T
Symbol Parameter Value
R
θJA
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 6 V
Collector Current 300 mA
Collector Dissipation (TA = 25 °C) 2 W
Junction Temperature 150 °C
Storage Temperature Range - 55 to +150 °C
=25°C unless otherwise noted
A
Units
Thermal Resistance, Junction to Ambient 62.5 °C/W
2
Ordering Information
Part Number Package Packing size Packing Method Remarks
FJT44KTF SOT-223 2500 pcs Tape and Reel
FJT44TF SOT-223 4000 pcs Tape and Reel
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJT44 Rev. B1 1
FJT44 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Collector-Base Breakdown Voltage IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage IE = 100μA, IC = 0
Collector-Base Cutoff Current VCB = 400V, IE = 0
Collector-Emitter Cutoff Current VCE = 400V, VBE = 0
Emitter-Base Cutoff Current VCE = 4V, IC = 0
DC Current Gain VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
=10V, IC=100mA
V
CE
Collector-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
Output Capacitance VCB = 20V, IE = 0, f = 1MHz
500 V
400 V
6V
100 nA
500 nA
100 nA
40
50
200
45
40
0.4
0.5
0.75
0.75 V
7pF
V
V
V
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJT44 Rev. B1 2
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