High Voltage and High Reliability
• High Speed Switching
•Wide SOA
FJP5027
FJP5027
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 10 A
Base Current 1.5 A
Collector Dissipation ( TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V
CE
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 2mH, Clamped
= 800V, IE = 0 10 µA
CB
= 5V , IC = 0 10 µA
EB
= 5V, IC = 0.2A
CE
= 5V, IC = 1A
V
CE
= 10V, IE = 0, f = 1MH z 60 pF
CB
= 10V, IC = 0.2A 15 MHz
CE
= 400V
CC
= 5IB1 = -2.5IB2 = 2A
I
C
R
= 200Ω
L
800 V
10
40
8
0.5 µs
hFE Classification
Classification N R O
h
FE1
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
10 ~ 20 15 ~ 30 20 ~ 40
Typical Characteristics
FJP5027
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
0.5
C
I
0.0
012345678
IB = 350mA
IB = 150mA
IB = 100mA
IB = 50mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
100
VCE = 5 V
TC = 125oC
TC = - 25oC
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
TC = 75oC
TC = 25oC
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
100
IC = 5 I
B
10
1
0.1
(sat) [V], SAT URATION VOLTAGE
CE
V
0.01
0.1 1 10
TC = 125oC
TC = 75oC
TC = 25oC
TC = - 25oC
IC [A], COLLECTOR CURRENT
10
IC = 5 I
B
TC = - 25oC
TC = 125oC
TC = 25oC
TC = 75oC
1
(sat) [V], SAT URATION VOLTAGE
BE
V
0.1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
[A], COLLECTOR CURRENT
C
I
IB1=3A, RB2=0
L=1mH, VCC=20V
1
10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time Figure 6. Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
10ms
100µs
1ms
100
ICMAX.(Pulse)
10
ICMAX(Continuous)
DC
1
0.1
0.01
[A], COLLECTOR CURRENT
C
I
1E-3
1 10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A, December 2003
FJP5027
Typical Characteristics
10
1
s], SWITCHING TIME
0.1
µ
µµ
µ
[
STG
, t
F
t
IB1=45mA, IB2=-0.5A
V
=125V
CC
0.01
0.1 1 10
IC [A], COLLECTOR CURRE NT
(Continued)
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Resistive Load Switching Characteristics Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Package Dimensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
FJP5027
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
Rev. A, December 2003©2003 Fairchild Semiconductor Corporation
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I6
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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