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High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
FJP13007
FJP13007
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
C
ICP
IB
P
T
T
CBO
CEO
EBO
C
J
STG
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter- Base Voltage 9 V
Collector Current (DC) 8 A
Collector Current (Pulse) 16 A
Base Current 4 A
Collector Dissipation (TC=25°C) 80 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Uni ts
BV
CEO
I
EBO
h
FE1
h
FE2
(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A
V
CE
(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A
V
BE
C
ob
f
T
t
ON
t
STG
t
F
* Pulse test: PW≤300µs, Duty cycle≤2%
Collector- Emitter Breakdown Voltage IC = 10mA, IB = 0 400 V
Emitter Cut-off Current V
*DC Current Gain
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.7 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 9V, IC = 0 1 mA
EB
V
= 5V, IC = 2A
CE
V
= 5V, IC = 5A
CE
= 5A, IB = 1A
I
C
= 8A, IB = 2A
I
C
I
= 5A, IB = 1A
C
= 10V, f = 0.1MHz 110 pF
CB
= 10V, IC = 0.5A 4 MHz
CE
= 125V, IC = 5A
CC
= -IB2 = 1A
I
B1
= 50Ω
R
L
8
5
60
30
1
2
3
1.2
1.6
1.6 µs
V
V
V
V
V
hFE Classification
Classification R(H1) O(H2)
h
FE1
©2004 Fairchild Semiconductor Corporation Rev. B, July 2004
15 ~ 28 26 ~ 39
Typical Characteristics
FJP13007
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Saturation Voltage
1000
100
10
[pF], OUTPUT CAPACITANCE
ob
C
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 5V
VBE(sat)
VCE(sat)
IC = 3 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
1000
100
[ns], TURN ON TIME
D
, t
R
t
VCC=125V
IC=5I
B
10
0.1 1 10
t
R
tD, VBE(off)=5V
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10000
1000
[ns], TURN OFF TIME
F
100
, t
STG
t
10
0.1 1 10
Figure 5. Turn Off Time Figure 6. Forward Biased Safe Operating Area
©2004 Fairchild Semiconductor Corporation
t
STG
t
F
IC[A], COLLECTOR CURRENT
VCC=125V
IC=5I
B
100
10
DC
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
10µs
1ms
100µs
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. B, July 2004