Fairchild FJMA790 service manual

tm

FJMA790

PNP Epitaxial Silicon Transistor

High current surface mount PNP silicon switching transistor
for load management in portable applications

• High Collector current

• Low Collector-Emitter Saturation Voltage

•RoHS Compliant

FJMA790 PNP Epitaxial Silicon Transistor

June 2006

RoHS Compliant

Pin 1 Pin 3

Collector

Emitter

1

C

2

C

6

C

5

C

3

Pin 6 Pin 4

MicroFET2X2

B

4

E

Absolute Maximum Ratings T

Symbol Parameter Value Units

V
V
V
I
P

T
T

CBO
CEO
EBO

C

D

J
STG

Collector-Base Voltage -50 V Collector-Emitter Voltage -35 V Emitter-Base Voltage -5 V Collector Current (DC) -2 A Power Dissipation Note1)

Note2) Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C

= 25°C unless otherwise noted

a

1.56

0.8

W
W

Thermal Characteristics T

Symbol Parameter Max.

RΘ

Note1): The device mounted on a 1inch2 pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material.
Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material

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FJMA790 Rev. A

Thermal Resistance, Junction to Ambient Note1)

JA

Note2)

=25°C unless otherwise noted

a

80

154

Units

°C/W
°C/W

FJMA790 PNP Epitaxial Silicon Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

a

Symbol Parameter Conditions Min. Typ. Max. Units

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

CBO
CEO
EBO

Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -35 V Emitter-Base Breakdown Voltage IC = -100µA, IC = 0 -5 V Collector Cut-off Current VCB = -35V, IC = 0 -0.1 µA Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA DC Current Gain VCE = -1.5V, IC = -1A

VCE = -1.5V, IC = -1.5A
VCE = -3V, IC = -2A
VCE = -2V, IC = -500mA

Collector-Emitter Saturation Voltage IC = -500mA, IB = -5mA

IC = -1A, IB = -10mA
IC = -2A, IB = -50mA

100
100
100
100

400

-250

-350

-450 Base-Emitter Saturation Voltage IC = -1A, IB = -10mA -0.9 V Base-Emitter On Voltage VCE = -2V, IC = -1A -0.9 V

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

790 FJMA790 MLP 2×2 Single 7” 8mm 3,000 units

mV
mV
mV

FJMA790 Rev. A1

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Typical Characteristics

FJMA790 PNP Epitaxial Silicon Transistor

600

500

125oC

400

Vce=-1.5V

500

400

125oC

75oC

75oC

300

25oC

200

hfe, DC Current Gain

100

1E-3 0.01 0.1 1

-40oC

Collector Current, [A]

300

25oC

200

hfe, DC Current Gain

100

1E-3 0.01 0.1 1

-40oC

Collector Current, [A]

Figure 1. DC Current Gain, Vce=1.5V Figure 2. DC Current Gain, Vce=2V

0.5

0.4

0.3

0.2

0.1

-40oC

Vce(sat), Saturation Current,[V]

0.0

0.01 0.1 1

Collector Current, [A]

Ic=40Ib

25oC

500

125oC

400

75oC

300

25oC

200

hfe, DC Current Gain

100

1E-3 0.01 0.1 1

-40oC

Collector Current, [A]

Vce=-3.0V

Vce=-2.0V

75oC

125oC

Figure 3. DC Current Gain,Vce=3V

1.0

0.8

0.6

25oC

0.4

0.2

-40oC

Vce(sat), Saturation Current,[V]

0.0

0.01 0.1 1

Collector Current, [A]

Figure 5. Collector-Emitter Satuation Voltage(2)

FJMA790 Rev. A

Ic=100Ib

125oC
75oC

Figure 4. Collector-Emitter Satuation Voltage(1)

1.0

0.8

125oC

75oC

0.6

25oC

-40oC

0.4

Vbe(sat), Saturation Current,[V]

0.01 0.1 1

Collector Current, [A ]

Ic=100Ib

Figure 6. Base-Emitter Saturation Voltage

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