Fairchild FJAF6810D Service Manual
FJAF6810D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built-In)
• High Collector-Base Breakdown Voltage : BV
• High Switching Speed : t
• For Color TV
(typ.) =0.1µs
F
CBO
= 1500V
FJAF6810D
1
TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
35
Ω
typ.
E
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 20 A
I
CP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 750 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A
Collector Dissipation 60 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V
V
CE
(sat) Base-E mitter Saturat ion Voltage IC=6A, IB=1.5A 1.5 V
V
BE
V
F
* Storage Time VCC=200V, IC=6A, RL=33
t
STG
* Fall Time 0.2 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1500V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 40 250 mA
Base-Emitter Breakdown Voltage IE=300mA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A
=5V, IC=6A
V
CE
7
58
Damper Diode Turn On Voltage IF = 6A 2 V
Ω
3 µs
IB1=1.2A, IB2= - 2.4A
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. B, August 2001
Thermal Resistance, Junction to Case 2.08 °C/W
Typical Characteristics
FJAF6810D
10
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
024681012141618
IB=2.0A
IB=1.0A
IB=0.8A
VCE [V], COLLECTOR-EMITTER VOLTAGE
IB=0.6A
IB=0.4A
IB=0.2A
100
VCE = 5V
Ta = 25oC
Ta = 125oC
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
Ta = - 25oC
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
IC = 5 I
B
1
Ta = 125 oC
(sat) [V], SATURATIOM VOLTAGE
CE
V
0.1
Ta = 25 oC
Ta = - 25 oC
110
(sat), SATURATION CURRENT
V
IC [A], COLLECTOR CURRENT
IC = 3 I
10
CE
0.1
B
1
Ta = 25 oC
110
IC [A], COLLECTOR CURRENT
Ta = 125 oC
Ta = - 25 oC
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
20
18
16
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0.0 0.3 0.6 0.9 1.2 1.5
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation
Ta = 25 oC
Ta = - 25 oC
Ta = 125 oC
s], SWITCHING TIME
µ
[
& t
t
10
t
1
0.1
STG
F
0.01
STG
t
F
110
IB1 = 1.2A, IC = 6A
= 200V
V
CC
IB2 [A], REVERSE BASE CURRENT
Rev. B, August 2001
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