FAIRCHILD FJAF6810 Service Manual

Page 1
FJAF6810
High Voltage Color Display Horizontal Deflection Output
• High Collector-Base Breakdown Voltage : BV
• High Switching Speed : t
• For Color Monitor
(typ.) =0.1µs
F
CBO
= 1500V
FJAF6810
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 20 A
I
CP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Collector-Base Voltage 1500 V Collector-Emitter Voltage 750 V Emitter-Base Voltage 6 V Collector Current (DC) 10 A
Collector Dissipation 60 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V
V
CE
(sat) Base-E mitter Saturat ion Voltage IC=6A, IB=1.5A 1.5 V
V
BE
* Storage Time VCC=200V, IC=6A, RL=33
t
STG
* Fall Time 0.2 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA Collector Cut-off Current VCB=800V, IE=0 10 µA Emitter Cut-off Current VEB=4V, IC=0 1 mA Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V DC Current Gain VCE=5V, IC=1A
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=5V, IC=6A
V
CE
IB1=1.2A, IB2= - 2.4A
10
58
3 µs
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001
Thermal Resistance, Junction to Case 2.08 °C/W
Page 2
Typical Characteristics
FJAF6810
10
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
02468101214
IB=2.0A
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
Ta = 1250C
Ta = 250C
IB=0.6A IB=0.4A
IB=0.2A
IC = 5 I
Ta = - 250C
100
VCE = 5V
Ta = 1250C
Ta = - 250C
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
Ta = 250C
IC [A], COLLECTOR CURRENT
10
B
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
Ta = - 250C
Ta = 250C
Ta = 1250C
IC = 3 I
B
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
14
VCE = 5V
12
10
8
6
4
[A], COLLECTOR CURRENT
C
2
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation
Ta = 1250C
10
1
0.1
[µs], SWITCHING TIME
F
250C
- 250C
& t t
STG
0.01 110
VCC = 200V,
= 6A, IB1 = 1.2A
I
C
t
STG
t
F
IB2 [A], REVERSE BASE CURRENT
Rev. A2, May 2001
Page 3
FJAF6810
Typical Characteristics
t
STG
t
F
RB2 = 0, IB1 = 15A V
= 30V, L = 200µH
CC
100
VCC = 200V,
= 6A, IB2 = - 2.4A
I
C
10
1
s], SWITCHING TIME
µ
[
F
0.1
& t
STG
t
0.01 110
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time
30
25
20
(Continued)
10
[µs], SWITCHING TIME & t
t
1
F
STG
0.1 110
t
F
VCC = 200V,
= 1.0A, IB2 = - 2.4A
I
B1
t
STG
IC [A], COLLECTOR CURRENT
100
IC (Pulse)
t = 100ms
t = 10ms
10
IC (DC)
t = 1ms
15
10
[A], COLLECTOR CURRENT
5
C
I
1
10 100 1000 10000
VBE(off) = - 6V
VBE(off) = - 3V
VCE [V], COLLECTOR-EMITTER VOLTAGE
1
0.1
[A], COLLECTOR CURRENT
C
I
TC = 25oC Sigle Pulse
0.01 1 10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
D
P
10
0
0 25 50 75 100 125 150 175 200
TC [oC], CASE TEMPERATURE
Figure 11. Power Dera ting
©2001 Fairchild Semiconductor Corporation
Rev. A2, May 2001
Page 4
Package Demensions
±0.20
4.50
15.50
TO-3PF
±0.20
ø3.60
±0.20
±0.20
10.00
10°
5.50
3.00 (1.50)
FJAF6810
±0.20
±0.20
±0.20
26.50
±0.20
14.80
±0.20
±0.20
14.50
16.50
2.00
2.00
4.00
0.75
5.45TYP
[5.45
±0.20
3.30
±0.20 ±0.20
±0.20
+0.20 –0.10
±0.30
±0.20
2.00
]
±0.20
2.00
2.00
5.45TYP
[5.45
±0.20
2.50
±0.20
±0.30
±0.20
5.50
]
0.85
±0.20
16.50
±0.03
0.90
±0.20
1.50
2.00
3.30
+0.20 –0.10
±0.20
±0.20
±0.20
23.00
±0.20
22.00
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™
2
E
CMOS™ EnSigna™ FACT™ FACT Quiet Series™
®
FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™
OPTOPLANAR™ PACMAN
POP™ PowerTrench
®
QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ Stealth™
SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H2
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Loading...