Fairchild FGL40N120AND service manual

tm

FGL40N120AND

1200V NPT IGBT

FGL40N120AND 1200V NPT IGBT

February 2008

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

= 2.6 V @ IC = 40A

CE(sat)

= 75ns (typ.)

rr

Description

Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

Applications

Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

C

G

GC E

TO-264

E

Absolute Maximum Ratings

Symbol Parameter FGL40N120AND Units

V

CES

V

GES

I

C

I

CM(1)

I

F

I

FM

P

D

SCWT T

J

T

STG

T

L

Notes:

(1) Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1200 V Gate-Emitter Voltage ±25 V Collector Current @TC = 25°C64 A Collector Current @T Pulsed Collector Current 160 A Diode Continuous Forward Current @TC = 100°C40 A Diode Maximum Forward Current 240 A Maximum Power Dissipation @TC = 25°C 500 W Maximum Power Dissipation @T Short Circuit Withstand Time,

V

= 600V, VGE = 15V, TC = 125°C

CE

Operating Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 seconds

= 100°C40 A

C

= 100°C 200 W

C

10 µs

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W

R

θJC

R

θJA

FGL40N120AND Rev. A2

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FGL40N120AND FGL40N120AND TO-264 - - 25

FGL40N120AND 1200V NPT IGBT

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

BV

CES

∆T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

c

res

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Q

g

Q

ge

Q

gc

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V

/

Temperature C oefficient of Breakdown Voltage

Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

G-E Threshold Voltage IC = 250µA, VCE = V

Collector to Emitter Saturation Voltage

Input Capacitance Output Capacitance -- 370 -- pF

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 1 mA

CES

, VCE = 0V -- -- ±250 nA

GES

GE

I

= 40A, VGE = 15V -- 2.6 3.2 V

C

= 40A, VGE = 15V,

I

C

T

= 125°C

C

= 64A, VGE = 15V -- 3.15 -- V

I

C

3.5 5.5 7.5 V

-- 2.9 -- V

-- 3200 -- pF

V

= 30V, VGE = 0V

CE

f = 1MHz

Reverse Transfer Capacitance -- 125 -- pF

Turn-On Delay Time

-- 15 -- ns Rise Time -- 20 -- ns Turn-Off Delay Time -- 110 -- ns Fall Time -- 40 80 ns Turn-On Switching Loss -- 2.3 3.45 mJ

V

= 600V, IC = 40A,

CC

R

= 5Ω, VGE = 15V,

G

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 1.1 1.65 mJ Total Switching Loss -- 3.4 5.1 mJ Turn-On Delay Time

-- 20 -- ns Rise Time -- 25 -- ns Turn-Off Delay Time -- 120 -- ns Fall Time -- 45 -- ns Turn-On Switching Loss -- 2.5 -- mJ

V

= 600V, IC = 40A,

CC

R

= 5Ω, VGE = 15V,

G

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 1.8 -- mJ Total Switching Loss -- 4.3 -- mJ Total Gate charge

V

= 600V, IC = 40A,

Gate-Emitter Charge -- 25 38 nC Gate-Collector Charge -- 130 195 nC

V

CE GE

= 15V

-- 220 330 nC

FGL40N120AND Rev. A2

2 www.fairchildsemi.com

FGL40N120AND 1200V NPT IGBT

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

= 40A TC = 25°C--3.24.0

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

F

= 40A,

I

F

di/dt = 200A/µs

= 125°C-- 2.7 --

T

C

T

= 25°C--75112

C

= 125°C -- 130 --

T

C

T

= 25°C-- 812

C

= 125°C-- 13 --

T

C

T

= 25°C -- 300 450

C

= 125°C -- 845 --

T

C

V

nS

A

nC

FGL40N120AND Rev. A2

3 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics

300

TC = 25°C

250

200

[A]

C

150

100

Collector Current, I

50

20V

17V

15V

12V

VGE = 10V

[A]

Collector Current, I

150

120

C

Common Emitter VGE = 15V

TC = 25°C TC = 125°C

90

60

30

FGL40N120AND 1200V NPT IGBT

0

0246810

Collector-Emitter Voltage, VCE [V]

0

0246

Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency

Temperature at Variant Current Level

5

Common Emitte r VGE = 15V

[V]

4

CE

3

2

Collector-Emitter Voltage, V

1

25 50 75 100 125

Case Temperature, TC [°C]

Figure 5. Saturation Voltage vs. V

20

Common Emitter TC = 25°C

16

[V]

CE

80A

40A

IC = 20A

GE

80

70

60

50

40

30

Load Current [A]

20

Duty cycle : 50%

10

TC = 100°C Power Dissipation = 100W

0

0.1 1 10 100 1000

VCC = 600V Load Current : peak of square wave

Frequency [ kHz]

Figure 6. Saturation Voltage vs. V

20

Common Emitter TC = 125°C

16

[V]

CE

GE

12

8

4

Collector-Emitter Voltage, V

0

048121620

FGL40N120AND Rev. A2

80A

40A

IC = 20A

Gate-Emitter Voltage, VGE [V]

12

8

4

Collector-Emitter Voltage, V

0

048121620

80A 40A

IC = 20A

Gate-Emitter Voltage, VGE [V]

4 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance

6000

5000

4000

3000

2000

Capacitance [pF]

1000

0

Ciss

Coss

Crss

110

Collector-Emitter Voltage, VCE [V]

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance

Gate Resistance

Common Emitter VGE = 0V, f = 1MHz

TC = 25°C

100

tr

Switching Time [ns]

10

td(on)

0 10203040506070

Common Emitter VCC = 600V, VGE = ±15V

IC = 40A TC = 25°C TC = 125°C

Gate Resistance, RG [Ω]

FGL40N120AND 1200V NPT IGBT

Common Emitter VCC = 600V, VGE = ±15V, IC = 40A

1000

TC = 25°C TC = 125°C

100

Switching Time [ns]

10

0 10203040506070

Gate Resistance, RG [Ω]

td(off)

tf

Common Emitter VCC = 600V, VGE = ±15V

IC = 40A TC = 25°C

10

TC = 125°C

Switching Loss [mJ]

1

0 10203040506070

Gate Resistance, RG [Ω]

Eon

Eoff

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.

Collector Current Collector Current

20 30 40 50 60 70 80

FGL40N120AND Rev. A2

5 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics

Common Emitter VGE = ±15V, RG = 5Ω

TC = 25°C

10

1

TC = 125°C

Eon

Eoff

Switching Loss [mJ]

0.1 20 30 40 50 60 70 80

Collector Curr en t , IC [A]

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

16

Common Emitter RL = 15Ω

14

TC = 25°C

12

[V]

GE

10

8

6

4

Gate-Emitter Voltage, V

2

0

0 50 100 150 200 250

Vcc = 200V

400V

Gate Charge, Qg [nC]

600V

FGL40N120AND 1200V NPT IGBT

Ic MAX (Pulsed)

100

Ic MAX (Continuous)

10

DC Operation

1

Single Nonrepetitive

0.1

Collector Current, Ic [A]

Pulse Tc = 25oC Curves must be derated linearly with increase in temperature

0.01

0.1 1 10 100 1000

Collector - Emitter Voltage, VCE [V]

1ms

100µs

50µs

100

[A]

C

10

Collector Current, I

Safe Operating Area

1

1 10 100 1000

VGE = 15V, TC = 125oC

Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

10

8

6

4

2

FGL40N120AND Rev. A2

0

0 10203040506070

6 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 19. Stored Charge Figure 20. Reverse Recovery Time

100

400

FGL40N120AND 1200V NPT IGBT

90

[ns]

rr

80

70

60

di/dt = 200A/µs

di/dt = 100A/µs

Reverse Recovery Time , t

50

0 10203040506070

Forward Current , IF [A]

Figure 21. Transient Thermal Impedance of IGBT

1

0.5

0.1

0.2

0.1

0.05

0.01

Thermal Response [Zthjc]

0.02

0.01

single pulse

1E-3

1E-5 1E-4 1E-3 0.01 0.1 1 10

[nC]

rr

300

200

100

Stored Recovery Charge , Q

0

0 10203040506070

Rectangular Pu lse Du rati on [sec]

di/dt = 200A/µs

di/dt = 100A/µs

Forward Current , IF [A]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm

×

Zthjc + T

×

Zthjc + T

C

FGL40N120AND Rev. A2

7 www.fairchildsemi.com

Mechanical Dimensions

FGL40N120AND 1200V NPT IGBT

FGL40N120AND Rev. A2

8 www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EZSWITCH™ *

™

Fairchild

®

Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST FastvCore™ FlashWriter

®

*

®

FPS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™

SM

FGL40N120AND 1200V NPT IGBT

* EZSWITCH™ and FlashWriter

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided

2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

in the labeling, can be reasonably expected to result in a significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

FGL40N120AND Rev. A2

Rev. I33

9 www.fairchildsemi.com

Fairchild FGL40N120AND service manual

Specifications and Main Features

Frequently Asked Questions

User Manual