Fairchild FGL40N120AND service manual

tm

FGL40N120AND

1200V NPT IGBT

FGL40N120AND 1200V NPT IGBT

February 2008

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

= 2.6 V @ IC = 40A

CE(sat)

= 75ns (typ.)

rr

Description

Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).

Applications

Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.

C

G

GC E

TO-264

E

Absolute Maximum Ratings

Symbol Parameter FGL40N120AND Units

V

CES

V

GES

I

C

I

CM(1)

I

F

I

FM

P

D

SCWT
T

J

T

STG

T

L

Notes:

(1) Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ±25 V
Collector Current @TC = 25°C64 A
Collector Current @T
Pulsed Collector Current 160 A
Diode Continuous Forward Current @TC = 100°C40 A
Diode Maximum Forward Current 240 A
Maximum Power Dissipation @TC = 25°C 500 W
Maximum Power Dissipation @T
Short Circuit Withstand Time,

V

= 600V, VGE = 15V, TC = 125°C

CE

Operating Junction Temperature -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 seconds

= 100°C40 A

C

= 100°C 200 W

C

10 µs

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W

R

θJC

R

θJA

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGL40N120AND Rev. A2

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FGL40N120AND FGL40N120AND TO-264 - - 25

FGL40N120AND 1200V NPT IGBT

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

BV

CES

∆T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

c

res

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Q

g

Q

ge

Q

gc

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V

/

Temperature C oefficient of Breakdown
Voltage

Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

G-E Threshold Voltage IC = 250µA, VCE = V

Collector to Emitter
Saturation Voltage

Input Capacitance
Output Capacitance -- 370 -- pF

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 1 mA

CES

, VCE = 0V -- -- ±250 nA

GES

GE

I

= 40A, VGE = 15V -- 2.6 3.2 V

C

= 40A, VGE = 15V,

I

C

T

= 125°C

C

= 64A, VGE = 15V -- 3.15 -- V

I

C

3.5 5.5 7.5 V

-- 2.9 -- V

-- 3200 -- pF

V

= 30V, VGE = 0V

CE

f = 1MHz

Reverse Transfer Capacitance -- 125 -- pF

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 20 -- ns
Turn-Off Delay Time -- 110 -- ns
Fall Time -- 40 80 ns
Turn-On Switching Loss -- 2.3 3.45 mJ

V

= 600V, IC = 40A,

CC

R

= 5Ω, VGE = 15V,

G

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 1.1 1.65 mJ
Total Switching Loss -- 3.4 5.1 mJ
Turn-On Delay Time

-- 20 -- ns
Rise Time -- 25 -- ns
Turn-Off Delay Time -- 120 -- ns
Fall Time -- 45 -- ns
Turn-On Switching Loss -- 2.5 -- mJ

V

= 600V, IC = 40A,

CC

R

= 5Ω, VGE = 15V,

G

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 1.8 -- mJ
Total Switching Loss -- 4.3 -- mJ
Total Gate charge

V

= 600V, IC = 40A,

Gate-Emitter Charge -- 25 38 nC
Gate-Collector Charge -- 130 195 nC

V

CE
GE

= 15V

-- 220 330 nC

FGL40N120AND Rev. A2

2 www.fairchildsemi.com

FGL40N120AND 1200V NPT IGBT

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

= 40A TC = 25°C--3.24.0

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

F

= 40A,

I

F

di/dt = 200A/µs

= 125°C-- 2.7 --

T

C

T

= 25°C--75112

C

= 125°C -- 130 --

T

C

T

= 25°C-- 812

C

= 125°C-- 13 --

T

C

T

= 25°C -- 300 450

C

= 125°C -- 845 --

T

C

V

nS

A

nC

FGL40N120AND Rev. A2

3 www.fairchildsemi.com