Fairchild FGH80N60FD2 service manual
tm
FGH80N60FD2
600V, 80A Field Stop IGBT
FGH80N60FD2 600V, 80A Field Stop IGBT
April 2008
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
=1.8V @ IC = 40A
CE(sat)
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
Applications
• Induction Heating Application
E
C
C
G
COLLECTOR
G
(FLANGE)
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C80 A
Collector Current @ T
Pulsed Collector Current @ TC = 25°C 160 A
Maximum Power Dissipation @ TC = 25°C290 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100°C40 A
C
= 100°C116 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 0.43 °C/W
θJC
(Diode) Thermal Resistance, Junction-to-Case 1.45 °C/W
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH80N60FD2 Rev. A1
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
FGH80N60FD2 600V, 80A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGH80N60FD2 FGH80N60FD2TU TO-247 Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
VGE = 0V, IC = 250uA
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ±400 nA
GES
-- 0.6 -- V/°C
G-E Threshold Voltage IC = 250uA, VCE = VGE 4.5 5.5 7.0 V
I
= 40A, VGE = 15V -- 1.8 2.4 V
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance -- 200 -- pF
C
= 40A, VGE = 15V,
I
C
T
= 125°C
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-- 2.05 -- V
-- 2110 -- pF
Reverse Transfer Capacitance -- 60 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 1.52 2.28 mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 1.88 -- mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time -- 56 -- ns
Turn-Off Delay Time -- 126 -- ns
Fall Time -- 50 100 ns
Turn-On Switching Loss -- 1 1.5 mJ
= 400 V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 0.52 0.78 mJ
Turn-On Delay Time
Rise Time -- 54 -- ns
Turn-Off Delay Time -- 131 -- ns
Fall Time -- 70 -- ns
Turn-On Switching Loss -- 1.1 -- mJ
= 400 V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 0.78 -- mJ
Total Gate Charge
V
= 400 V, IC = 40A,
Gate-Emitter Charge -- 14 -- nC
Gate-Collector Charge -- 58 -- nC
CE
V
= 15V
GE
-- 21 -- ns
-- 20 -- ns
-- 120 -- nC
FGH80N60FD2 Rev. A1
2 www.fairchildsemi.com
FGH80N60FD2 600V, 80A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25°C- 1.2 1.5
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage IF = 15A
Diode Reverse Recovery Time
=15A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
C
= 125°C- 1.0 -
T
C
T
= 25°C- 61 -
C
= 125°C - 125 -
T
C
T
= 25°C- 4.8 -
C
= 125°C- 8.4 -
T
C
T
= 25°C - 146 -
C
= 125°C - 525 -
T
C
nC
V
ns
ns
FGH80N60FD2 Rev. A1
3 www.fairchildsemi.com
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