Fairchild FGA25N120ANTD, FGA25N120ANTD_F109 service manual
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July, 2007
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V
@ IC = 25A and TC = 25°C
• Low switching loss: E
@ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability
off, typ
G
CE(sat), typ
C
E
= 2.0V
= 0.96mJ
TO-3PN
Absolute Maximum Ratings
Symbol Description FGA25N120ANTD Units
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
D
TJ Operating Junction Temperature -55 to +150 °C
T
stg
T
L
Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
Pulsed Collector Current
Diode Continuous Forward Current @ TC = 100°C 25 A
Diode Maximum Forward Current 150 A
Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
(Note 1)
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
C
C
G
G
E
E
90 A
300 °C
tm
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Thermal Resistance, Junction-to-Case for IGBT -- 0.4 °C/W
Thermal Resistance, Junction-to-Case for Diode -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FGA25N120ANTD FGA25N120ANTD TO-3P -- -- 30
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
I
CES
I
GES
Collector Cut-Off Current VCE = V
G-E Leakage Current V
, VGE = 0V -- -- 3 mA
CES
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
2 www.fairchildsemi.com
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage IF = 25A TC = 25°C -- 2.0 3.0 V
TC = 125°C -- 2.1 --
Diode Reverse Recovery Time IF = 25A
dI/dt = 200 A/µs
Diode Peak Reverse Recovery Current
TC = 25°C -- 235 350 ns
TC = 125°C -- 300 --
TC = 25°C -- 27 40 A
TC = 125°C -- 31 --
Diode Reverse Recovery Charge TC = 25°C -- 3130 4700 nC
TC = 125°C -- 4650 --
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
3 www.fairchildsemi.com
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