Fairchild FFPF15S60S service manual

tm
STEALTH II Rectifier
FFPF15S60S
FFPF15S60S
April 2009
TM
Features
• High Speed Switching, trr < 35ns @ IF = 15A
• High Reverse Voltage and High Reliabilit
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits

TO-220F-2L

1. Cathode 2. Anode
15A, 600V STEALTHTM II Rectifier
The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epi­taxial planar construction.
This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica­tions. Their low stored charge and hyperfast soft recovery mini­mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
1. Cathode 2. Anode
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 52oC 15 A
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150
= 25oC unless otherwise noted
C
150 A

Thermal Characteristics

Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 4.6

Package Marking and Ordering Information

Device Marking Device Package Eco Status Packing Quantity

F15S60S FFPF15S60STU TO-220F-2L Green/RoHS Tube 50

For Fairchild's definition of "green"Eco Status,please visit: http://www.fairchildsemi.com/company/green/rohs_green.html

©2009 Fairchild Semiconductor Corporation FFPF15S60S Rev. A
o
C
o
C/W
www.fairchildsemi.com1
FFPF15S60S
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Min. Typ . Max. Units
VFM1
IRM1
t
rr
t
rr
I
rr
S factor Q
rr
t
rr
I
rr
S factor Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
IF = 15A IF = 15A
VR = 6 00V VR = 600V
IF = 1A, di/dt = 100A/μs, VR = 30V TC = 25oC - 21 30 ns
IF = 15A, di/dt = 200A/μs, VR = 390V TC = 25oC
IF = 15A, di/dt = 200A/μs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
TC = 25oC TC = 125oC
TC = 25oC TC = 125oC
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
23
2.5
0.7 29
55
4.3
1.1
118
2.6
-
-
-
100 500
35
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
μA
ns
A
nC
ns
A
nC
FFPF15S60S Rev. A
www.fairchildsemi.com2
Loading...
+ 3 hidden pages