STEALTH II Rectifier
FFPF15S60S
FFPF15S60S
April 2009
TM
Features
• High Speed Switching, trr < 35ns @ IF = 15A
• High Reverse Voltage and High Reliabilit
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO-220F-2L
1. Cathode 2. Anode
15A, 600V STEALTHTM II Rectifier
The FFPF15S60S is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
1. Cathode 2. Anode
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 52oC 15 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150
= 25oC unless otherwise noted
C
150 A
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 4.6
Package Marking and Ordering Information
Device Marking Device Package Eco Status Packing Quantity
F15S60S FFPF15S60STU TO-220F-2L Green/RoHS Tube 50
For Fairchild's definition of "green"Eco Status,please visit: http://www.fairchildsemi.com/company/green/rohs_green.html
©2009 Fairchild Semiconductor Corporation
FFPF15S60S Rev. A
o
C
o
C/W
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FFPF15S60S
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Min. Typ . Max. Units
VFM1
IRM1
t
rr
t
rr
I
rr
S factor
Q
rr
t
rr
I
rr
S factor
Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
IF = 15A
IF = 15A
VR = 6 00V
VR = 600V
IF = 1A, di/dt = 100A/μs, VR = 30V TC = 25oC - 21 30 ns
IF = 15A, di/dt = 200A/μs, VR = 390V TC = 25oC
IF = 15A, di/dt = 200A/μs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
23
2.5
0.7
29
55
4.3
1.1
118
2.6
-
-
-
100
500
35
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
μA
ns
A
nC
ns
A
nC
FFPF15S60S Rev. A
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