FFPF12UP20DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 35ns (@IF = 6A)
• High Reverse Voltage : V
• Enhanced Avalanche Energy Rated
• Planar Construction
Applications
• Output Rectifiers
• Switching Mode Power Supply
• Free-wheeling Diode
• Power Switching Circuits
RRM
= 200V
FFPF12UP20DN Ultrafast Recovery Power Rectifier
February 2006
1
1
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings (per diode) T
Symbol Parameter Value Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 200 V
Working Peak Reverse Voltage 200 V
DC Blocking Voltage 200 V
Average Rectified Forward Current @ TC = 120°C6 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TO-220F
= 25°C unless otherwise noted
C
1. Anode 2. Cathode 3. Anode
2
60 A
3
Thermal Characteristics
Symbol Parameter Max Units
R
θJC
Maximum Thermal Resistance, Junction to Case 5.0 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F12UP20DN FFPF12UP20DNTU TO-220F - - 50
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FFPF12UP20DN Rev. A
FFPF12UP20DN Ultrafast Recovery Power Rectifier
Electrical Characteristics (per diode) T
= 25°C unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
V
FM *
I
RM *
t
rr
t
a
t
b
Q
rr
W
AVL
* Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
IF = 6A
I
= 6A
F
VR = 200V
V
= 200V
R
IF =1A, di/dt = 100A/µs, V
I
=6A, di/dt = 200A/µs, V
F
IF =6A, di/dt = 200A/µs, V
Avalanche Energy (L = 20mH) 10 - - mJ
= 30V
CC
= 130V
CC
= 130V TC = 25 °C
CC
= 25 °C
T
C
T
= 100 °C
C
= 25 °C
T
C
T
= 100 °C
C
= 25 °C
T
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
-
-
-
-
-
-
-
-
-
12
12
24
-
-
-
-
-
-
1.15
1.0
100
500
30
35
-
-
-
Test Circuit and Waveforms
V
V
µA
µA
ns
ns
ns
ns
nC
FFPF12UP20DN Rev. A
2 www.fairchildsemi.com