FFPF10UP60S
Features
• Ultrafast with soft recovery
= 1A), < 40ns
(@ I
F
• Reverse Voltage, 600V
• Forward Voltage (@ T
• Enhanced Avalanche Energy
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
= 60°C), < 2V
C
FFPF10UP60S
Ultrafast Rectifier
TO-220F-2L
1 2
1. Cathode 2. Anode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 600 V
Average Rectified Forward Current @ TC = 60°C10A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TC=25°C unless otherwise noted
50 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
t
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Thermal Resistance, Junction to Case 4.5 °C/W
TC=25 °C unless otherwise noted
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
=1A, di/dt = 100A/µs)
(I
F
Maximum Reverse Recovery Time
=10A, di/dt = 200A/µs)
(I
F
Avalanche Energy (L=40mH) 20 - - mJ
= 10A
F
= 10A
F
@ rated V
TC = 25 °C
R
T
= 25 °C
C
= 100 °C
T
C
= 100 °C
T
C
-
-
-
-
-
-
-
-58- ns
34
1.0
17
-
-
-
-
2.2
2.0
100
500
40
1.5
30
V
µA
ns
A
nC
Rev. A, May 2004©2004 Fairchild Semiconductor Corporation
Typical Characteristics
FFPF10UP60S
30
10
[A]
F
1
TC = 100oC
TC = 25oC
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
50
25
Capacitance , Cj [pF]
Typical Capacitance
at 0V = 51.4 pF
1000
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
1E-3
TC = 100oC
TC = 25oC
100 200 300 400 500 600
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage
70
[ns]
rr
60
50
IF = 10A
TC = 25oC
1
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
10
9
[A]
rr
8
7
6
5
4
3
2
1
Reverse Recovery Current , I
0
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2004 Fairchild Semiconductor Corporation
IF = 10A
TC = 25oC
Reverse Recovery Time , t
40
100 500
di/dt [A/µs]
Figure 4. Typical Reverse Recovery Time
vs. di/dt
[A]
10
F(AV)
D
C
5
Average Forward Current , I
0
40 60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derating Curve
Rev. A, May 2004