FFPF10UP20S Ultrafast Rectifier
FFPF10UP20S
Ultrafast Rectifier
Features
• Ultrafast with soft recovery
= 1A), < 35ns
(@ I
F
• Reverse Voltage, 200V
• Forward Voltage (@ T
• Enhanced Avalanche Energy
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
= 100°C), < 1.1V
C
TO-220F-2L
1 2
Absolute Maximum Ratings
(per diode) Ta = 25°C unless otherwise noted
1. Cathode 2. Anode
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Peak Repetitive Reverse Voltage 200 V
Average Rectified Forward Current @ TC = 100°C10 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
Ta = 25°C unless otherwise noted
Maximum Thermal Resistance, Junction to Case 4.3 °C/W
100 A
©2005 Fairchild Semiconductor Corporation
FFPF10UP20S Rev. B
1
www.fairchildsemi.com
FFPF10UP20S Ultrafast Rectifier
Electrical Characteristics
(per diode) Ta = 25°C unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
t
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
= 10A
F
= 10A
I
F
T
= 25 °C
C
= 100 °C
T
C
-
-
-
-
1.15
1.10
Maximum Instantaneous Reverse Current
@ rated V
TC = 25 °C
R
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
=6A, di/dt = 200A/µs)
(I
F
Maximum Reverse Recovery Time
=1A, di/dt = 100A/µs)
(I
F
= 100 °C
T
C
-
-
-
-
-
- - 35 ns
-
-
32
1.65
24.4
100
500
-
-
-
Avalanche Energy (L=40mH) 5 - - mJ
V
µA
ns
A
nC
FFPF10UP20S Rev. B
2
www.fairchildsemi.com