Fairchild FFPF08S60ST service manual
tm
FFPF08S60ST
1. Cathode 2. Anode
TO-220F-2L
1
1. Cathode 2. Anode
2
May 2012
STEALTH II Rectifier
TM
FFPF08S60ST
Features
• High Speed Switching, t
• High Reverse Voltage and High Reliability
• RoHS component
< 30ns @ IF = 8A
rr
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
8A, 600V STEALTHTM II Rectifier
The FFPF08S60ST is STEALTH
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
TM
II rectifier with soft recovery
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 95 °C8A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
80 A
Thermal Characteristics
Symbol Parameter Max Units
R
θJC
Package Marking and Ordering
Device Marking Device Package Reel Size Tape Width Quantity
F08S60ST FFPF08S60STTU TO-220F-2L - - 50
©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FFPF08S60ST Rev. C0
Maximum Thermal Resistance, Junction to Case 3.4 °C/W
Information
FFPF08S60ST
Electrical Characteristics T
= 25°C unless otherwise noted
C
Parameter Conditions Min. Typ. Max Units
1
V
FM
1
I
RM
t
rr
trr
Irr
S factor
Q
rr
trr
Irr
S factor
Q
rr
W
AVL
IF = 8A
I
= 8A
F
VR = 600V
V
= 600V
R
= 25 °C
T
C
T
= 125 °C
C
= 25 °C
T
C
T
= 125 °C
C
-
-
-
-
2.1
1.6
2.6
-
-
-
100
500
IF =1A, di/dt = 100A/μs, VR= 30V TC = 25 °C- - 25 ns
IF =8A, di/dt = 200A/μs, VR = 390V TC = 25 °C-
-
-
-
IF =8A, di/dt = 200A/μs, VR= 390V TC = 125 °C-
-
-
-
19
2.2
0.6
21
58
4.3
1.3
125
30
-
-
-
-
-
-
-
Avalanche Energy (L = 40mH) 20 - - mJ
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
Test Circuit and Waveforms
V
V
μA
μA
ns
A
nC
ns
A
nC
FFPF08S60ST Rev. C0
2 www.fairchildsemi.com
Loading...